Product Information

P6KE33CA A0G

P6KE33CA A0G electronic component of Taiwan Semiconductor

Datasheet
ESD Suppressors / TVS Diodes 600W 33V Bidirect
Manufacturer: Taiwan Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

74: USD 0.0269 ea
Line Total: USD 1.99

123 - Global Stock
Ships to you between
Fri. 24 May to Thu. 30 May
MOQ: 74  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
123 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 1

Stock Image

P6KE33CA A0G
Taiwan Semiconductor

1 : USD 0.0278
10 : USD 0.0272
25 : USD 0.0267
50 : USD 0.0267
100 : USD 0.0267

123 - WHS 2


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 74
Multiples : 1

Stock Image

P6KE33CA A0G
Taiwan Semiconductor

74 : USD 0.0269
100 : USD 0.0264

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Series
Polarity
Termination Style
Breakdown Voltage
Working Voltage
Clamping Voltage
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Pd - Power Dissipation
Factory Pack Quantity :
Tradename
LoadingGif

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Additional Infomation About Product

P6KE Transil, transient voltage surge suppressor (TVS) Datasheet production data Features Peak pulse power: 600 W (10/1000 s ) Stand-off voltage range 6.8 to 440 V Unidirectional and bidirectional types Low clamping factor Fast response time UL recognized DO-15 (DO-204AC) Complies with the following standards IEC 61000-4-2 level 4 15 kV (air discharge) 8 kV (contact discharge) MIL STD 883G, method 3015-7 Class 3 HBM (human body model) Description Transil diodes provide high overvoltage protection by clamping action. Their instantaneous response to transient overvoltages makes them particularly suited to protect voltage sensitive devices such as MOS Technology and low voltage supplied ICs. TM:Transil is a trademarks of STMicroelectronics. April 2012 Doc ID 3068 Rev 7 1/9 This is information on a product in full production. www.st.com 9Characteristics P6KE 1 Characteristics Table 1. Absolute maximum ratings (T = 25 C) amb Symbol Parameter Value Unit (1) P Peak pulse power dissipation T = T 600 W PP j initial amb P Power dissipation on infinite heatsink T = 75 C 5 W amb t = 10 ms Non repetitive surge peak forward current for unidirectional p I 100 A FSM types T = T j initial amb T Storage temperature range -65 to + 175 C stg T Maximum operating junction temperature 175 C j T Maximum lead temperature for soldering during 10 s at 5 mm from case. 260 C L 1. For a surge greater than the maximum values, the diode will fail in short-circuit. Table 2. Thermal resistances Symbol Parameter Value Unit R Junction to leads 20 th(j-l) C/W R Junction to ambient on printed circuit. L = 10 mm 75 th(j-a) lead Figure 1. Electrical characteristics - definitions II II Symbol Parameter II II FF PPPP Unidirectional V Stand-off voltage RM V Breakdown voltage BR V Clamping voltage CL II RR VV VV VV VV FF VV CLCL BRBR RMRM VV VV VV VV I Leakage current V CLCL BRBR RMRM II RM RM RMRM II I Peak pulse current RMRM II PP RMRM VV VV VV RMRM BRBR CLCL II II RR RR T Voltage temperature coefficient V Forward voltage drop F Bidirectional R Dynamic resistance D II PPPP II PPPP Figure 2. Pulse definition for electrical characteristics Repetitive pulse current t = rise time (s) r t = pulse duration time (s) p t t r p 2/9 Doc ID 3068 Rev 7

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS

Taiwan Semiconductor may also be referenced as

TAIWAN SEMI
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)

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