Product Information

P6KE6.8A R0

P6KE6.8A R0 electronic component of Taiwan Semiconductor

Datasheet
Diode TVS Single Uni-Dir 5.8V 600W 2-Pin DO-15

Manufacturer: Taiwan Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Availability Price Quantity
0 - Warehouse 1

MOQ : 3500
Multiples : 3500

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P6KE6.8A R0
Taiwan Semiconductor

3500 : USD 0.0646
N/A

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Polarity
Breakdown Voltage
Clamping Voltage
Brand
Operating Temperature Classification
Test Current It
Number Of Elements
Reverse Stand-Off Voltage
Operating Temp Range
Peak Pulse Power Dissipation
Package Type
Rad Hardened
Peak Pulse Current
Leakage Current Max
Mounting
Pin Count
LoadingGif

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P6KE SERIES Taiwan Semiconductor CREAT BY ART Transient Voltage Suppressor FEATURES - Excellent clamping capability - Low dynamic impedance - 600W surge capability at 10 / 1000 s waveform - Fast response time: Typically less than 1.0ps from 0 volt to V for unidirectional BR and 5.0ns for bidirectional - Typical I less than 1A above 10V R - UL recognized file # E-326243 - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition DO-204AC (DO-15) MECHANICAL DATA Case: DO-204AC (DO-15) Molding compound, UL flammability classification rating 94V-0 Base P/N with suffix on packing code - green compound (halogen-free) Base P/N with prefix on packing code - AEC-Q101 qualified Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker test, with prefix on packing code meet JESD 201 class 2 whisker test Weight: 0.4g (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T =25 unless otherwise noted) A PARAMETER SYMBOL VALUE UNIT Peak power dissipation at T =25, Tp=1ms (Note 1) P 600 Watts A PK Steady state power dissipation at T =75 L P 5 Watts D lead lengths .375", 9.5mm (Note 2) Peak forward surge current, 8.3 ms single half sine-wave I 100 A FSM superimposed on rated load (Note 3) O Operating junction temperature range T - 55 to +175 J C O Storage temperature range T - 55 to +175 C STG Note 1: Non-repetitive Current Pulse Per Fig. 3 and Derated above T =25 Per Fig. 2 A Note 2: Mounted on 5 x 5 mm Copper Pads to Each Terminal Note 3: 8.3ms Single Half Sine-wave or Equivalent Square Wave, Duty Cycle=4 Pulses Per Minute Maximum Devices for Bipolar Applications 1. For Bidrectional Use C or CA Suffix for Types P6KE6.8 through Types P6KE440 2. Electrical Characterstics Apply in Both Directions ORDERING INFORMATION PART NO. AEC-Q101 PACKING CODE GREEN COMPOUND PACKAGE PACKING QUALIFIED CODE A0 DO-15 1,500 / Ammo box P6KExxxx Prefix R0 Suffix DO-15 3,500 / 13" Paper reel (Note 1) B0 DO-15 1,000 / Bulk packing Note 1:xxx defines voltage from 6.8V (P6KE6.8) to 440V (P6KE440) EXAMPLE AEC-Q101 GREEN COMPOUND PREFERRED P/N PART NO. PACKING CODE DESCRIPTION QUALIFIED CODE P6KE56A A0 A0 P6KE56A P6KE56A A0G P6KE56A A0 G Green compound P6KE56AHA0 H A0 AEC-Q101 qualified P6KE56A Document Number: DS_D1405018 Version: J14P6KE SERIES Taiwan Semiconductor CREAT BY ART RATINGS AND CHARACTERISTICS CURVES (TA=25 unless otherwise noted) FIG. 1 PEAK PULSE POWER RATING CURVE FIG.2 PULSE DERATING CURVE 100 125 NON-REPETITIVE PULSE WAVEFORM SHOWN in FIG.3 100 TA= 25 10 75 50 1 25 0 0. 1 0 25 50 75 100 125 150 175 200 0. 1 1 10 100 1000 10000 o T , AMBIENT TEMPERATURE ( C) A tp, PULSE WIDTH, (uS) FIG. 3 CLAMPING POWER PULSE WAVEFORM FIG. 4 MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT UNIDIRECTIONAL ONLY PULSE WIDTH(td) is DEFINED 100 140 tr=10sec as the POINT WHERE the PEAK 8.3ms Single Half Sine Wave CURRENT DECAYS to 50% OF IPPM 120 Peak Value IPPM 100 Half Value-IPPM/2 80 10/1000s WAVEFORM as DEFINED by R.E.A. 60 40 20 td 0 10 0 0.511.522.533.5 4 1 10 100 t, TIME ms NUMBER OF CYCLES AT 60 Hz FIG. 5 TYPICAL JUNCTION CAPACITANCE 10000 VR=0 1000 MEASURED at 100 STAND-OFF VOLTAGE,Vwm f=1.0MHz Vsig=50mVp-p 10 1 10 100 V( ), BREAKDOWN VOLTAGE (V) BR Document Number: DS_D1405018 Version: J14 PEAK PULSE CURRENT (%) P , PEAK PULSE POWER, KW CJ, JUNCTION CAPACITANCE (pF) A PPM IFSM, PEAK FORWARD SURGE CURRENT PEAK PULSE POWER(P ) or CURRENT(I ) PP PPM (A) DERATING IN PERCENTAGE(%)

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
TAIWAN SEMI
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)

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