P6SMB10A R4 Taiwan Semiconductor

P6SMB10A R4 electronic component of Taiwan Semiconductor
P6SMB10A R4 Taiwan Semiconductor
P6SMB10A R4 ESD Protection Diodes / TVS Diodes
P6SMB10A R4  Circuit Protection
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of P6SMB10A R4 ESD Protection Diodes / TVS Diodes across the USA, India, Europe, Australia, and various other global locations. P6SMB10A R4 ESD Protection Diodes / TVS Diodes are a product manufactured by Taiwan Semiconductor. We provide cost-effective solutions for ESD Protection Diodes / TVS Diodes, ensuring timely deliveries around the world.

Part No. P6SMB10A R4
Manufacturer: Taiwan Semiconductor
Category: ESD Protection Diodes / TVS Diodes
Description: ESD Suppressors / TVS Diodes 600W,10V,5%,UNI, TVS
Datasheet: P6SMB10A R4 Datasheet (PDF)
Price (USD)
3000: USD 0.1363 ea
Line Total: USD 408.9 
Availability : 0
  
QtyUnit Price
3000$ 0.1363
6000$ 0.1282

Availability 0
Ship by Fri. 21 Nov to Thu. 27 Nov
MOQ : 3000
Multiples : 3000
QtyUnit Price
3000$ 0.2139
6000$ 0.2012


Availability 0
Ship by Wed. 19 Nov to Fri. 21 Nov
MOQ : 3
Multiples : 1
QtyUnit Price
3$ 0.3078
25$ 0.2696
66$ 0.2019
180$ 0.191
3000$ 0.184


Availability 0
Ship by Fri. 21 Nov to Thu. 27 Nov
MOQ : 3000
Multiples : 3000
QtyUnit Price
3000$ 0.1363
6000$ 0.1282

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Series
Product Type
Vesd - Voltage ESD Contact
Vesd - Voltage ESD Air Gap
Polarity
Termination Style
Breakdown Voltage
Working Voltage
Clamping Voltage
Ipp - Peak Pulse Current
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Cnhts
Hts Code
Mxhts
Pd - Power Dissipation
Factory Pack Quantity :
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the P6SMB10A R4 from our ESD Protection Diodes / TVS Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the P6SMB10A R4 and other electronic components in the ESD Protection Diodes / TVS Diodes category and beyond.

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P6SMB SERIES Taiwan Semiconductor CREAT BY ART Surface Mount Transient Voltage Suppressor FEATURES - Low profile package - Ideal for automated placement - Glass passivated junction - Built-in strain relief - Excellent clamping capability - Fast response time: Typically less than 1.0ps from 0 volt to BV min - Typical IR less than 1A above 10V - Moisture sensitivity level: level 1, per J-STD-020 - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition DO-214AA (SMB) MECHANICAL DATA Case: DO-214AA (SMB) Molding compound, UL flammability classification rating 94V-0 Base P/N with suffix on packing code - green compound (halogen-free) Base P/N with prefix on packing code - AEC-Q101 qualified Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker test with prefix on packing code meet JESD 201 class 2 whisker test Polarity: Indicated by cathode band Weight: 0.09 g (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T =25 unless otherwise noted) A PARAMETER VALUE SYMBOL UNIT Peak power dissipation at T =25, tp=1ms (Note 1) P 600 Watts A PK Steady state power dissipation P 3 Watts D Peak forward surge current, 8.3 ms single half sine-wave I 100 A FSM superimposed on rated load Maximum instantaneous forward voltage at 50 A for V 3.5 / 5.0 Volts F Unidirectional only (Note 2) R 10 JC Typical thermal resistance /W R 55 JA O Operating junction temperature range T - 55 to +150 J C O Storage temperature range T - 55 to +150 C STG Note 1: Non-repetitive Current Pulse Per Fig. 3 and Derated above T =25 Per Fig. 2 A Note 2: V =3.5V on P6SMB6.8 thru P6SMB91 Devices and V =5.0V on P6SMB100 thru P6SMB220 Device. F F Devices for Bipolar Applications 1. For Bidrectional Use C or CA Suffix for Types P6SMB6.8 thru Types P6SMB220A 2. Electrical Characterstics Apply in Both Directions ORDERING INFORMATION PART NO. AEC-Q101 PACKING CODE GREEN COMPOUND PACKAGE PACKING QUALIFIED CODE R5 SMB 850 / 7 Plastic reel P6SMBxxxx Prefix R4 Suffix SMB 3,000 / 13 Paper reel (Note 1) M4 SMB 3,000 / 13 Plastic reel Note 1:xxx defines voltage from 6.8V (P6SMB6.8) to 220V (P6SMB220A) EXAMPLE AEC-Q101 GREEN PREFERRED P/N PART NO. PACKING CODE DESCRIPTION QUALIFIED COMPOUND P6SMB20A R5 P6SMB20A R5 P6SMB20A R5G P6SMB20A R5 G Green compound P6SMB20AHR5 H R5 AEC-Q101 qualified P6SMB20A Document Number: DS D1405062 Version: J14P6SMB SERIES Taiwan Semiconductor CREAT BY ART RATINGS AND CHARACTERISTICS CURVES (TA=25 unless otherwise noted) FIG. 1 PEAK PULSE POWER RATING CURVE FIG.2 PULSE DERATING CURVE 100 125 NON-REPETITIVE PULSE WAVEFORM SHOWN in FIG.3 100 10 75 50 1 25 0 0. 1 0 25 50 75 100 125 150 175 200 0. 1 1 10 100 1000 10000 o T , AMBIENT TEMPERATURE ( C) tp, PULSE WIDTH, (s) A FIG. 3 CLAMPING POWER PULSE WAVEFORM FIG. 4 MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT UNIDIRECTIONAL ONLY PULSE WIDTH(td) is DEFINED 100 140 as the POINT WHERE the PEAK tr=10s CURRENT DECAYS to 50% OF IPPM 8.3ms Single Half Sine Wave 120 Peak Value IPPM 100 Half Value-IPPM/2 80 10/1000s, WAVEFORM as DEFINED by R.E.A. 60 40 20 td 0 10 00.5 1 1.522.5 33.5 4 1 10 100 t, TIME ms NUMBER OF CYCLES AT 60 Hz FIG. 5 TYPICAL JUNCTION CAPACITANCE 10000 VR=0 1000 MEASURED at STAND-OFF 100 VOLTAGE,Vwm f=1.0MHz Vsig=50mVp-p 10 1 10 100 V( ), BREAKDOWN VOLTAGE (V) BR Document Number: DS D1405062 Version: J14 PEAK PULSE CURRENT (%) P , PEAK PULSE POWER, KW CJ, JUNCTION CAPACITANCE (pF) A PPM IFSM, PEAK FORWARD SURGE CURRENT (A) PEAK PULSE POWER(P ) OR CURRENT (I ) A PP PP DERATING IN PERCENTAGE (%)

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)
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