Product Information

P6SMB200A R5G

P6SMB200A R5G electronic component of Taiwan Semiconductor

Datasheet
ESD Suppressors / TVS Diodes 600W, 200V, 5%, Unidirectional, TVS

Manufacturer: Taiwan Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

155: USD 0.0499 ea
Line Total: USD 7.73

980 - Global Stock
Ships to you between
Fri. 03 May to Thu. 09 May
MOQ: 155  Multiples: 1
Pack Size: 1
Availability Price Quantity
980 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 1
Multiples : 1

Stock Image

P6SMB200A R5G
Taiwan Semiconductor

1 : USD 0.0694
10 : USD 0.0646
25 : USD 0.0597
50 : USD 0.0547
100 : USD 0.0499
250 : USD 0.0488
500 : USD 0.0488
1000 : USD 0.0488

980 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 155
Multiples : 1

Stock Image

P6SMB200A R5G
Taiwan Semiconductor

155 : USD 0.0499
250 : USD 0.0488

     
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P6SMB6.8(A) - P6SMB220(A) Taiwan Semiconductor 600W, 6.8V - 220V Surface Mount Transient Voltage Suppressor FEATURES KEY PARAMETERS Low profile package PARAMETER VALUE UNIT Ideal for automated placement V 5.5 - 185 V WM Glass passivated junction V 6.8 - 220 V BR Excellent clamping capability P 600 W Typical I less than 1A above 10V PPSM R Fast response time: Typically less than T 150 C J MAX 1.0ps from 0 volt to BV min Package DO-214AA (SMB) Moisture sensitivity level: level 1, per J-STD-020 Configuration Single die RoHS Compliant Halogen-free according to IEC 61249-2-21 APPLICATIONS Switching mode power supply (SMPS) Adapters TV Monitor MECHANICAL DATA Case: DO-214AA (SMB) Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 DO-214AA (SMB) Meet JESD 201 class 2 whisker test Polarity: As marked Weight: 0.090 g (approximately) ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A PARAMETER SYMBOL VALUE UNIT Non-repetitive peak impulse power dissipation with P 600 W (1) PPSM 10/1000s waveform Steady state power dissipation at T =25C P 3 W A tot Peak forward surge current, 8.3 ms single half sine-wave I 100 A FSM superimposed on rated load (2) V 3.5/5.0 V Forward Voltage I =50A for Uni-directional only F F T -55 to +150 C Junction temperature J T -55 to +150 C Storage temperature STG Notes: 1. Non-repetitive current pulse per Fig. 3 and derated above T =25C per Fig. 2 A 2. V =3.5V on P6SMB6.8 - P6SMB91 device and V =5.0V on P6SMB100 - P6SMB220 device. F F Devices for Bipolar Applications 1. For bidirectional use C or CA suffix for types P6SMB6.8 - types P6SMB220A 2. Electrical characteristics apply in both directions 1 Version: O2004 P6SMB6.8(A) - P6SMB220(A) Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT Junction-to-case thermal resistance R 10 C/W JC Junction-to-ambient thermal resistance R 55 C/W JA ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A Maximum Maximum Maximum Breakdown Stand-Off Maximum Device Test Reverse Peak Pulse clamping Voltage Voltage Temperature Device Marking Current Leakage Current voltage V (V) BR V Coefficient of WM Code I (mA) V I (A) V I (Note 1) T WM PPM C PPM (V) V (%/C) BR I (A) (Note 2) (V) D Min Max P6SMB6.8 KDJ 6.12 7.48 10 5.50 1000 58 10.8 0.057 P6SMB6.8A KEJ 6.46 7.14 10 5.80 1000 60 10.5 0.057 P6SMB7.5 KFJ 6.75 8.25 10 6.05 500 53 11.7 0.061 P6SMB7.5A KGJ 7.13 7.88 10 6.40 500 55 11.3 0.061 P6SMB8.2 KHJ 7.38 9.02 10 6.63 200 50 12.5 0.065 P6SMB8.2A KKJ 7.79 8.61 10 7.02 200 52 12.1 0.065 P6SMB9.1 KLJ 8.19 10.00 1.0 7.37 50 45 13.8 0.068 P6SMB9.1A KMJ 8.65 9.55 1.0 7.78 50 47 13.4 0.068 P6SMB10 KNJ 9.00 11.00 1.0 8.10 10 42 15.0 0.073 P6SMB10A KPJ 9.50 10.5 1.0 8.55 10 43 14.5 0.073 P6SMB11 KQJ 9.90 12.1 1.0 8.92 1 38 16.2 0.075 P6SMB11A KRJ 10.5 11.6 1.0 9.40 1 40 15.6 0.075 P6SMB12 KSJ 10.8 13.2 1.0 9.72 1 36 17.3 0.078 P6SMB12A KTJ 11.4 12.6 1.0 10.2 1 37 16.7 0.078 P6SMB13 KUJ 11.7 14.3 1.0 10.5 1 33 19.0 0.081 P6SMB13A KVJ 12.4 13.7 1.0 11.1 1 34 18.2 0.081 P6SMB15 KWJ 13.5 16.5 1.0 12.1 1 28 22.0 0.084 P6SMB15A KXJ 14.3 15.8 1.0 12.8 1 29 21.2 0.084 P6SMB16 KYJ 14.4 17.6 1.0 12.9 1 26 23.5 0.086 P6SMB16A KZJ 15.2 16.8 1.0 13.6 1 28 22.5 0.086 P6SMB18 LDJ 16.2 19.8 1.0 14.5 1 23 26.5 0.088 P6SMB18A LEJ 17.1 18.9 1.0 15.3 1 25 25.5 0.088 P6SMB20 LFJ 18.0 22.0 1.0 16.2 1 21 29.1 0.090 P6SMB20A LGJ 19.0 21.0 1.0 17.1 1 22 27.7 0.090 P6SMB22 LHJ 19.8 24.2 1.0 17.8 1 19 31.9 0.092 P6SMB22A LKJ 20.9 23.1 1.0 18.8 1 20 30.6 0.092 P6SMB24 LLJ 21.6 26.4 1.0 19.4 1 18 34.7 0.094 P6SMB24A LMJ 22.8 25.2 1.0 20.5 1 19 33.2 0.094 P6SMB27 LNJ 24.3 29.7 1.0 21.8 1 16 39.1 0.096 P6SMB27A LPJ 25.7 28.4 1.0 23.1 1 16.8 37.5 0.096 P6SMB30 LQJ 27.0 33.0 1.0 24.3 1 14.0 43.5 0.097 P6SMB30A LRJ 28.5 31.5 1.0 25.6 1 15.0 41.4 0.097 P6SMB33 LSJ 29.7 36.3 1.0 26.8 1 13.0 47.7 0.098 P6SMB33A LTJ 31.4 34.7 1.0 28.2 1 13.8 45.7 0.098 P6SMB36 LUJ 32.4 39.6 1.0 29.1 1 12.0 52.0 0.099 P6SMB36A LVJ 34.2 37.8 1.0 30.8 1 12.6 49.9 0.099 P6SMB39 LWJ 35.1 42.9 1.0 31.6 1 11.1 56.4 0.100 P6SMB39A LXJ 37.1 41.0 1.0 33.3 1 11.6 53.9 0.100 P6SMB43 LYJ 38.7 47.3 1.0 34.8 1 10.0 61.9 0.101 P6SMB43A LZJ 40.9 45.2 1.0 36.8 1 10.6 59.3 0.101 P6SMB47 MDJ 42.3 51.7 1.0 38.1 1 9.2 67.8 0.101 P6SMB47A MEJ 44.7 49.4 1.0 40.2 1 9.7 64.8 0.101 P6SMB51 MFJ 45.9 56.1 1.0 41.3 1 8.5 73.5 0.102 2 Version: O2004

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
TAIWAN SEMI
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)

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