Product Information

PU3DFSH

PU3DFSH electronic component of Taiwan Semiconductor

Datasheet
Rectifiers 25ns, 3A, 200V, Ultra Fast Recovery Rectifier

Manufacturer: Taiwan Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.698 ea
Line Total: USD 0.7

28653 - Global Stock
Ships to you between
Thu. 30 May to Mon. 03 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
27072 - WHS 1


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1

Stock Image

PU3DFSH
Taiwan Semiconductor

1 : USD 0.4817
10 : USD 0.3737
100 : USD 0.2278
500 : USD 0.2112
1000 : USD 0.1519
2500 : USD 0.1412
14000 : USD 0.1269
28000 : USD 0.1269
42000 : USD 0.1222

     
Manufacturer
Product Category
Mounting Style
Package / Case
Vr - Reverse Voltage
If - Forward Current
Type
Configuration
Vf - Forward Voltage
Max Surge Current
Ir - Reverse Current
Recovery Time
Minimum Operating Temperature
Maximum Operating Temperature
Qualification
Packaging
Hts Code
LoadingGif

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PU3BFSH PU3DFSH Taiwan Semiconductor 3A, 100V - 200V Ultra Fast Surface Mount Rectifier FEATURES KEY PARAMETERS AEC-Q101 qualified PARAMETER VALUE UNIT Planar technology I 3 A F Low power loss, high efficiency V 100 - 200 V RRM Ideal for automated placement Moisture sensitivity level: level 1, per J-STD-020 I 85 A FSM RoHS Compliant T 175 C J MAX Halogen-free according to IEC 61249-2-21 Package SOD-128 Configuration Single die APPLICATIONS High frequency switching DC/DC Snubber MECHANICAL DATA Case: SOD-128 Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 2 whisker test Polarity: Indicated by cathode band Weight: 0.028g (approximately) SOD-128 ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A PARAMETER SYMBOL PU3BFSH PU3DFSH UNIT Marking code on the device PU3BFS PU3DFS Repetitive peak reverse voltage V 100 200 V RRM Reverse voltage, total rms value V 70 140 V R(RMS) Forward current I 3 A F t = 8.3ms 85 Surge peak forward current single half I A FSM sine-wave superimposed on rated load t = 1.0ms 170 Junction temperature T -55 to +175 C J Storage temperature T -55 to +175 C STG 1 Version: B2109 PU3BFSH PU3DFSH Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT Junction-to-lead thermal resistance R 14 C/W JL Junction-to-ambient thermal resistance R 74 C/W JA Junction-to-case thermal resistance R 19 C/W JC Thermal Performance Note: Units mounted on PCB (5mm x 5mm Cu pad test board) ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL TYP MAX UNIT I = 1.5A, T = 25C 0.81 - V F J I = 3.0A, T = 25C 0.86 0.93 V F J (1) Forward voltage V F I = 1.5A, T = 125C 0.66 - V F J I = 3.0A, T = 125C 0.73 - V F J T = 25C - 2 A J (2) Reverse current rated V I R R T = 125C - 10 A J Junction capacitance 1MHz, V = 4.0V C 47 - pF R J I = 0.5A, I = 1.0A, I = 0.25A - 25 F R rr Reverse recovery time t ns rr I = 1.0A, di/dt = 50A/s, V = 30V 31 - F R Reverse recovery current I 4.9 - A RM Reverse recovery charge I = 3.0A, di/dt = 200A/s, V = 100V Q 51 - nC F R rr Reverse recovery time t 23 - ns rr Notes: 1. Pulse test with PW = 0.3ms 2. Pulse test with PW = 30ms ORDERING INFORMATION (1) ORDERING CODE PACKAGE PACKING PU3xFSH SOD-128 14,000/ Tape & Reel Notes: 1. x defines voltage from 100V(PU3BFSH) to 200V(PU3DFSH) 2 Version: B2109

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
TAIWAN SEMI
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)

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