SK39AHR3G Taiwan Semiconductor

4 SK32A - SK320A Taiwan Semiconductor 3A, 20V - 200V Surface Mount Schottky Barrier Rectifier FEATURES KEY PARAMETERS Low power loss, high efficiency PARAMETER VALUE UNIT Ideal for automated placement I 3 A F(AV) Guard ring for over-voltage protection V 20 - 200 V RRM High surge current capability Compliant to RoHS Directive 2011/65/EU and I 70 A FSM in accordance to WEEE 2002/96/EC T 150 C J MAX Halogen-free according to IEC 61249-2-21 Package DO-214AC (SMA) Configuration Single die APPLICATIONS Switching mode power supply (SMPS) Adapters Lighting application On-board DC/DC converter MECHANICAL DATA Case: DO-214AC (SMA) Molding compound meets UL 94V-0 flammability rating Packing code with suffix means green compound (halogen-free) Part no. with suffix H means AEC-Q101 qualified Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 2 whisker test DO-214AC (SMA) Polarity: As marked Weight: 0.07 g (approximately) ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A SK SK SK SK SK SK SK SK SK PARAMETER SYMBOL UNIT 32A 33A 34A 35A 36A 39A 310A 315A 320A SK SK SK SK SK SK SK SK SK Marking code on the device 32A 33A 34A 35A 36A 39A 310A 315A 320A Repetitive peak reverse 20 30 40 50 60 90 100 150 200 V V RRM voltage Reverse voltage, total rms 14 21 28 35 42 63 70 105 140 V V R(RMS) value Maximum DC blocking 20 30 40 50 60 90 100 150 200 V V DC voltage Forward current I 3 A F(AV) Surge peak forward current, 8.3 ms single half sine-wave I 70 A FSM superimposed on rated load per diode Critical rate of rise of off-state dV/dt 10,000 V/s voltage Junction temperature T - 55 to +150 C J Storage temperature T - 55 to +150 C STG 1 Version:U1809 4 SK32A - SK320A Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP. UNIT Junction-to- ambient thermal resistance R 66 C/W JA Junction-to-lead thermal resistance R 25 C/W JL ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL TYP. MAX. UNIT SK32A - 0.55 SK33A V SK34A SK35A - 0.72 V (1) Forward voltage per diode SK36A I = 3A,T = 25C V F J F SK39A - 0.85 V SK310A SK315A - 0.95 V SK320A SK32A - 0.5 mA SK33A SK34A SK35A - 0.2 mA Reverse current rated V per R SK36A T =25C I (2) J R diode SK39A SK310A - 0.1 mA SK315A SK320A SK32A - 10 mA SK33A SK34A SK35A - 5 mA Reverse current rated V per R SK36A T = 100C I J R (2) diode SK39A SK310A - - mA SK315A SK320A SK32A - - mA SK33A SK34A SK35A - 10 mA Reverse current rated V per R SK36A T = 125C I J R (2) diode SK39A SK310A - 0.5 mA SK315A SK320A Notes: 1. Pulse test with PW=0.3 ms 2. Pulse test with PW=30 ms 2 Version:U1809