X-On Electronics has gained recognition as a prominent supplier of SMA6J12A R3G esd suppressors / tvs diodes across the USA, India, Europe, Australia, and various other global locations. SMA6J12A R3G esd suppressors / tvs diodes are a product manufactured by Taiwan Semiconductor. We provide cost-effective solutions for esd suppressors / tvs diodes, ensuring timely deliveries around the world.

SMA6J12A R3G

SMA6J12A R3G electronic component of Taiwan Semiconductor
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See Product Specifications
Part No.SMA6J12A R3G
Manufacturer: Taiwan Semiconductor
Category:ESD Suppressors / TVS Diodes
Description: ESD Suppressors / TVS Diodes 600W,12V,5%,UNIDIR, TVS
Datasheet: SMA6J12A R3G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.6612 ea
Line Total: USD 0.66

Availability - 593
Ships to you between
Thu. 06 Jun to Mon. 10 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1 - WHS 1


Ships to you between Fri. 31 May to Thu. 06 Jun

MOQ : 1
Multiples : 1
1 : USD 0.7602
10 : USD 0.6798
100 : USD 0.6041
500 : USD 0.467
1000 : USD 0.3913
3600 : USD 0.3086
7200 : USD 0.2705
21600 : USD 0.2639
46800 : USD 0.2593

3 - WHS 2


Ships to you between Fri. 31 May to Thu. 06 Jun

MOQ : 1
Multiples : 1
1 : USD 0.7678

593 - WHS 3


Ships to you between Thu. 06 Jun to Mon. 10 Jun

MOQ : 1
Multiples : 1
1 : USD 0.6612
10 : USD 0.5911
100 : USD 0.5359
500 : USD 0.4174
1000 : USD 0.3438
3600 : USD 0.2829
7200 : USD 0.2519
21600 : USD 0.2461
46800 : USD 0.2438

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product Type
Polarity
Number of Channels
Termination Style
Breakdown Voltage
Working Voltage
Clamping Voltage
Ipp - Peak Pulse Current
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Pd - Power Dissipation
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
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We proudly offer the SMA6J12A R3G ESD Suppressors / TVS Diodes at competitive prices in the United States, Australia, India, Europe and more. By maintaining strong relationships with manufacturers and optimizing our operations, we provide significant savings to our customers. Customer satisfaction is at the heart of our business. Our knowledgeable and friendly customer service team is always ready to assist you with any inquiries or issues. From product selection to after-sales support, we are dedicated to providing our customers with a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why we are the top choice for the SMA6J12A R3G ESD Suppressors / TVS Diodes.

SMA6J SERIES Taiwan Semiconductor CREAT BY ART Surface Mount Transient Voltage Suppressor FEATURES - Low profile package - Ideal for automated placement - Glass passivated junction - Built-in strain relief - Excellent clamping capability - Fast response time: Typically less than 1.0ps from 0 volt to BV min - 600 watts peak pulse power capability with a 10 / 1000 s waveform - Moisture sensitivity level: level 1, per J-STD-020 - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC DO-214AC (SMA) - Halogen-free according to IEC 61249-2-21 definition - AEC-Q101 qualified MECHANICAL DATA Case: DO-214AC (SMA) Molding compound, UL flammability classification rating 94V-0 Packing code with suffix means green compound (halogen-free) Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 2 whisker test Polarity: Indicated by cathode band Weight: 0.06 g (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T =25C unless otherwise noted) A PARAMETER SYMBOL Value UNIT Peak power dissipation at T =25C, tp=1ms(Note 1) P 600 Watts A PK Steady state power dissipation P 4 Watts D Peak forward surge current, 8.3 ms single half sine-wave I 50 A FSM superimposed on rated load R 56 JA Typcial thermal resistance C/W R 20 JL Operating junction temperature range T - 55 to +175 C J T Storage temperature range - 55 to +175 C STG Note 1: Non-repetitive Current Pulse Per Fig. 3 and Derated above T =25C Per Fig. 2 A Document Number: DS D1502001 Version: A15SMA6J SERIES Taiwan Semiconductor CREAT BY ART ORDER INFORMATION (EXAMPLE) SMA6J26A R3G Greencompoundcode Packingcode Partno. RATINGS AND CHARACTERISTICS CURVES (T =25C unless otherwise noted) A FIG. 2 MAXIMUM NON-REPETITIVE FORWARD SURGE FIG. 1 PEAK PULSE POWER RATING CURVE CURRENT UNIDIRECTIONAL ONLY 100 50 NON-REPETITIVE PULSE WAVEFORM 8.3ms Single Half Sine Wave SHOWN in FIG.3 40 10 30 20 1 10 0. 1 0 0. 1 1 10 100 1000 10000 1 10 100 tp, PULSE WIDTH, (uS) NUMBER OF CYCLES AT 60 Hz FIG. 4 TYPICAL JUNCTION CAPACITANCE FIG. 3 CLAMPING POWER PULSE WAVEFORM 10000 PULSE WIDTH(td) is DEFINED 140 as the POINT WHERE the PEAK tr=10s CURRENT DECAYS to 50% OF IPPM 120 Peak Value I PPM 100 1000 Half Value-I /2 PPM 80 10/1000s, WAVEFORM as DEFINED by R.E.A. 60 100 40 f=1.0MHz Vsig=50mVp-p 20 10 td 0 1 10 100 0 0.5 11.5 22.5 33.5 4 V( ), BREAKDOWN VOLTAGE (V) BR t, TIME ms Document Number: DS D1502001 Version: A15 PEAK PULSE CURRENT (%) P , PEAK PULSE POWER, KW PPM IFSM, PEAK FORWARD SURGE CURRENT (A) CJ, JUNCTION CAPACITANCE (pF) A

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
TAIWAN SEMI
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)

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