SMBJ10A M4G Taiwan Semiconductor

SMBJ10A M4G electronic component of Taiwan Semiconductor
SMBJ10A M4G Taiwan Semiconductor
SMBJ10A M4G ESD Protection Diodes / TVS Diodes
SMBJ10A M4G  Circuit Protection
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of SMBJ10A M4G ESD Protection Diodes / TVS Diodes across the USA, India, Europe, Australia, and various other global locations. SMBJ10A M4G ESD Protection Diodes / TVS Diodes are a product manufactured by Taiwan Semiconductor. We provide cost-effective solutions for ESD Protection Diodes / TVS Diodes, ensuring timely deliveries around the world.

Part No. SMBJ10A M4G
Manufacturer: Taiwan Semiconductor
Category: ESD Protection Diodes / TVS Diodes
Description: ESD Suppressors TVS Diodes 600W 11.7V 5% Unidirectional TVS
Datasheet: SMBJ10A M4G Datasheet (PDF)
Price (USD)
6000: USD 0.2981 ea
Line Total: USD 1788.6 
Availability : 0
  
QtyUnit Price
6000$ 0.2981
9000$ 0.2981
24000$ 0.297

Availability 0
Ship by Wed. 19 Nov to Fri. 21 Nov
MOQ : 6000
Multiples : 6000
QtyUnit Price
6000$ 0.2981
9000$ 0.2981
24000$ 0.297

   
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We are delighted to provide the SMBJ10A M4G from our ESD Protection Diodes / TVS Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SMBJ10A M4G and other electronic components in the ESD Protection Diodes / TVS Diodes category and beyond.

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SMBJ SERIES Taiwan Semiconductor 600W, 5V - 170V Surface Mount Transient Voltage Suppressor FEATURES KEY PARAMETERS Ideal for automated placement PARAMETER VALUE UNIT Glass passivated junction 5 - 170 V V WM Excellent clamping capability 6.4 231 V V (uni - directional) Fast response time: Typically less than 1.0ps BR Typical I less than 1A above 10V R 6.4 231 V V (bi - directional) BR Moisture sensitivity level: level 1, per J-STD-020 600 W P PK AEC-Q101 qualified available: 150 C T ordering code with suffix H J MAX RoHS Compliant Package DO-214AA (SMB) Halogen-free according to IEC 61249-2-21 Configuration Single Die APPLICATIONS Switching mode power supply (SMPS) MECHANICAL DATA Case: DO-214AA (SMB) Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 2 whisker test Polarity: As marked Weight: 0.090 g (approximately) DO-214AA (SMB) ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A PARAMETER SYMBOL VALUE UNIT Non-repetitive peak impulse power dissipation with (1) P 600 W PK 10/1000s waveform Steady state power dissipation at T =25C 3 A P W D Peak forward surge current, 8.3 ms single half sine-wave I 100 A FSM superimposed on rated load for Uni-directional only (2) Forward Voltage I =50A for Uni-directional only V 3.5 / 5.0 V F F Junction temperature T - 55 to +150 C J Storage temperature T - 55 to +150 C STG Notes: 1. Non-repetitive current pulse per Fig. 3 and derated above T =25C per Fig. 2 A 2. V =3.5V on SMBJ5.0 - SMBJ90 devices and V =5.0V on SMBJ100 - SMBJ170 devices F F Devices for Bipolar Applications 1. For bidirectional use C or CA suffix for types SMBJ5.0 - types SMBJ170 2. Electrical characteristics apply in both directions 1 Version: Q2004 SMBJ SERIES Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT Junction-to-Case Thermal Resistance R 10 C/W JC Junction-to-Ambient Thermal Resistance R 55 C/W JA ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A Maximum Maximum Breakdown voltage Working peak Maximum Test blocking V I BR T stand-off impulse clamping current leakage (V) Part number Marking code voltage current voltage I current T (Note 1) V I V I WM PP C PP (mA) I V D WM (V) (A) (V) (A) (Note 2) Min Max SMBJ5.0 KD 6.40 7.30 10 5.0 800 65.0 9.6 SMBJ5.0A KE 6.40 7.00 10 5.0 800 68.0 9.2 SMBJ6.0 KF 6.67 8.15 10 6.0 800 55.0 11.4 SMBJ6.0A KG 6.67 7.37 10 6.0 800 61.0 10.3 SMBJ6.5 KH 7.22 8.82 10 6.5 500 51.0 12.3 SMBJ6.5A KK 7.22 7.98 10 6.5 500 56.0 11.2 SMBJ7.0 KL 7.78 9.51 10 7.0 200 47.0 13.3 SMBJ7.0A KM 7.78 8.60 10 7.0 200 52.0 12.0 SMBJ7.5 KN 8.33 10.3 1 7.5 100 44.0 14.3 SMBJ7.5A KP 8.33 9.21 1 7.5 100 48.0 12.9 SMBJ8.0 KQ 8.89 10.9 1 8.0 50 42.0 15.0 SMBJ8.0A KR 8.89 9.83 1 8.0 50 46.0 13.6 SMBJ8.5 KS 9.44 11.5 1 8.5 10 39.0 15.9 SMBJ8.5A KT 9.44 10.4 1 8.5 10 43.0 14.4 SMBJ9.0 KU 10.0 12.2 1 9.0 5 37.0 16.9 SMBJ9.0A KV 10.0 11.1 1 9.0 5 40.0 15.4 SMBJ10 KW 11.1 13.6 1 10 5 33.0 18.8 SMBJ10A KX 11.1 12.3 1 10 5 37.0 17.0 SMBJ11 KY 12.2 14.9 1 11 1 31.0 20.1 SMBJ11A KZ 12.2 13.5 1 11 1 34.0 18.2 SMBJ12 LD 13.3 16.3 1 12 1 28.0 22.0 SMBJ12A LE 13.3 14.7 1 12 1 31.0 19.9 SMBJ13 LF 14.4 17.6 1 13 1 26.0 23.8 SMBJ13A LG 14.4 15.9 1 13 1 29.0 21.5 SMBJ14 LH 15.6 19.1 1 14 1 24.4 25.8 SMBJ14A LK 15.6 17.2 1 14 1 27.0 23.2 SMBJ15 LL 16.7 20.4 1 15 1 23.1 26.9 SMBJ15A LM 16.7 18.5 1 15 1 25.1 24.4 SMBJ16 LN 17.8 21.8 1 16 1 21.8 28.8 SMBJ16A LP 17.8 19.7 1 16 1 24.2 26.0 SMBJ17 LQ 18.9 23.1 1 17 1 20.0 30.5 SMBJ17A LR 18.9 20.9 1 17 1 22.8 27.6 SMBJ18 LS 20.0 24.4 1 18 1 19.5 32.2 SMBJ18A LT 20.0 22.1 1 18 1 21.5 29.2 SMBJ20 LU 22.2 27.1 1 20 1 17.6 35.8 SMBJ20A LV 22.2 24.5 1 20 1 19.4 32.4 SMBJ22 LW 24.4 29.8 1 22 1 15.0 39.4 SMBJ22A LX 24.4 26.9 1 22 1 17.7 35.5 SMBJ24 LY 26.7 32.6 1 24 1 14.6 43.0 SMBJ24A LZ 26.7 29.5 1 24 1 16.0 38.9 SMBJ26 MD 28.9 35.3 1 26 1 13.5 46.6 SMBJ26A ME 28.9 31.9 1 26 1 14.9 42.1 2 Version: Q2004

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)
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