SS36 Taiwan Semiconductor

creat by art SS32 - SS320 3.0AMPS Surface Mount Schottky Barrier Rectifiers SMC/DO-214AB RoHSRoHS Pb COCOMMPPLLIIANCANCEE Features For surface mounted application Easy pick and place Metal to sillicon rectifier, majority carrier conduction Low power loss, high efficiency High current capability, low VF High surge current capability Plastic material used carriers Underwriters Laboratory Classification 94V-0 Epitaxial construction High temperature soldering: 260/10 seconds at terminals Green compound with suffix on packing code & prefix on datecode Dimensions in inches and (millimeters) Mechanical Data Case: JEDEC DO-214AB Molded plastic Marking Diagram Terminals: Pure tin plated, lead free SS3X = Specific Device Code Polarity: Indicated by cathode band G = Green Compound Packaging: 16mm tape per EIA Std RS-481 Y = Year Weight: 0.21 gram M = Work Month Maximum Ratings and Electrical Characteristics Rating at 25 ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% SS SS SS SS SS SS SS SS SS Type Number Symbol Unit 32 33 34 35 36 39 310 315 320 Maximum Repetitive Peak Reverse Voltage V 20 30 40 50 60 90 100 150 200 V RRM Maximum RMS Voltage V 14 21 28 35 42 63 70 105 140 V RMS Maximum DC Blocking Voltage V 20 30 40 50 60 90 100 150 200 V DC Maximum Average Forward Rectified Current I 3 A F(AV) Peak Forward Surge Current, 8.3 ms Single Half Sine- I 100 70 A FSM wave Superimposed on Rated Load (JEDEC method) Maximum Instantaneous Forward Voltage (Note 1) 3 A T =25 V 0.5 0.75 0.85 0.95 V A F T =100 0.4 0.65 0.70 0.80 A 0.5 0.1 Maximum Reverse Current Rated VR T =25 A T =100 I 10 5 - mA A R T =125 A - 0.5 R 17 jL O Typical Thermal Resistance C/W R 55 jA O Operating Temperature Range T - 55 to + 125 - 55 to + 150 J C O T Storage Temperature Range - 55 to + 150 STG C Note 1: Pluse Test with PW=300 usec, 1% Duty Cycle Version:F11RATINGS AND CHARACTERISTIC CURVES (SS32 THRU SS320) FIG.1 FORWARD CURRENT DERATING CURVE FIG. 2 MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 3.5 100 SS35-SS320 AT RATED TL 3 8.3mS Single Half Sine Wave 80 2.5 JEDEC Method 2 60 SS32-SS34 SS32-SS34 1.5 40 1 SS35-SS320 20 0.5 RESISTIVE OR INDUCTIVELOAD 0 0 50 60 70 80 90 100 110 120 130 140 150 1 10 100 o LEAD TEMPERATURE ( C) NUMBER OF CYCLES AT 60 Hz FIG. 3 TYPICAL FORWARD CHARACTERISRICS FIG. 4 TYPICAL REVERSE CHARACTERISTICS 100 100 SS35-SS36 TA=125 10 SS32-SS34 10 1 TA=75 SS315-SS320 1 0.1 SS39-SS310 TA=25 0.1 0.01 SS32-SS34 PULSE WIDTH=300uS SS35-SS320 1% DUTY CYCLE 0.001 0.01 0 20 40 60 80 100 120 140 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) FORWARD VOLTAGE (V) FIG. 5 TYPICAL JUNCTION CAPACITANCE FIG. 6 TYPICAL TRANSIENT THERMAL IMPEDANCE 100 1000 SS32-SS34 SS35-SS36 10 100 SS39-SS320 1 TA=25 f=1.0MHz Vsig=50mVp-p 10 0.1 0.1 1 10 100 0.01 0.1 1 10 100 REVERSE VOLTAGE (V) T-PULSE DURATION(s) Version:F11 AVERAGE FORWARD A CAPACITANCE (pF) INSTANTANEOUS FORWARD A CURRENT (A) CURRENT (A) INSTANTANEOUS REVERSE A PEAK FORWARD SURGE A TRANSIENT THERMAL IMPEDANCE A CURRENT (mA) CURRENT (A) ( /W)