TESD5V0V4UCX6 RFG Taiwan Semiconductor

TESD5V0V4UCX6 Taiwan Semiconductor V =5V, 0.6pF ESD Protection Array WM FEATURES KEY PARAMETERS Meet IEC61000-4-2(ESD) 18kV(air) , 12kV(contact) PARAMETER VALUE UNIT Working Voltage: 5V P 75 W PPSM RoHS Compliant I 5 A PP Halogen-free according to IEC 61249-2-21 V 5 V WM V at I =1 mA 6 V (BR) R APPLICATIONS V at I = 5 A 15 V C PP Digital Visual Interface(DVI) 10/100/1000 Ethernet Package SOT-26 Projection TV Monitors and Flat Panel Displays Configuration Single die MECHANICAL DATA Case: SOT-26 Molding compound meets UL 94 V-0 flammability rating Moisture sensitivity level: level 1, per J-STD-020 Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 1A whisker test Polarity: As marked Weight: 7.65 mg (approximately) ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A PARAMETER SYMBOL TESD5V0V4UCX6 UNIT Marking code on the device F4 Rated random recurring peak Impulse power dissipation P 75 W PPSM (tp=8/20s waveform) Peak impulse current (tp=8/20s waveform) I 5 A PP ESD per IEC 61000-4-2 (Air) 18 V kV ESD ESD per IEC 61000-4-2 (Contact) 12 Junction temperature range T -55 to +150 C J Storage temperature range T -55 to +150 C STG 1 Version: B2003 TESD5V0V4UCX6 Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL MIN TYP MAX UNIT (1) I = 1 mA 6 - - Reverse breakdown voltage R V V (BR) - - 5 Rated working standoff voltage V V WM (1) V = 5 V - - 0.1 Reverse current R I A R I = 1 A PP (2) - - 12 Clamping voltage V V C (any I/O pin to Ground ) I = 5 A PP (2) - - 15 Clamping voltage V V C (any I/O pin to Ground ) 1 MHz, V =0V R - - 0.4 Junction capacitance C pF J (between I/O pins) 1 MHz, V =0V R - - 0.6 Junction capacitance C pF J (any I/O pin to Ground) Notes: 1. Pulse test with PW=30 ms 2. tp=8/20s waveform ORDERING INFORMATION ORDERING CODE PACKAGE PACKING 3K / 7 Reel TESD5V0V4UCX6 RFG SOT-26 2 Version: B2003