Product Information

TSD30H120CW C0G

Name: TSD30H120CW C0G
Brand: Taiwan Semiconductor
SKU: TSD30H120CWC0G_TaiwanSemiconductor
Availability: OutOfStock
Rating: 5 (11 reviews)

TSD30H120CW C0G electronic component of Taiwan Semiconductor

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Datasheet

Schottky Diodes & Rectifiers Diode, Low VF Trench Schottky, 30A, 120V

Manufacturer: Taiwan Semiconductor

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

4000: USD 0.5505 ea
Line Total: USD 2202

0 - Global Stock

MOQ: 4000 Multiples: 4000
Pack Size: 4000

More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 - WHS 1 Ships to you between Fri. 31 May to Tue. 04 Jun MOQ : 4000 Multiples : 4000 TSD30H120CW C0G Taiwan Semiconductor	4000 : USD 0.5505 10000 : USD 0.5292 24000 : USD 0.5161

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Additional Infomation About Product

TSD30H100CW TSD30H200CW Taiwan Semiconductor 30A, 100V - 200V Trench Schottky Rectifier FEATURES KEY PARAMETERS Patented Trench Schottky technology PARAMETER VALUE UNIT Excellent high temperature stability I 2 x 15 A F Low forward voltage V 100 - 200 V RRM Low power loss/ high efficiency High forward surge capability I 200 A FSM RoHS Compliant T 150 C J MAX Halogen-free according to IEC 61249-2-21 2 Package TO-263AB (D PAK) Configuration Dual dies APPLICATIONS Trench Schottky barrier rectifier is designed for high frequency switched mode power supplies such as adapters, lighting, and DC/DC converters. MECHANICAL DATA 2 Case: TO-263AB (D PAK) Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 1A whisker test Polarity: As marked Weight: 1.60g (approximately) 2 TO-263AB (D PAK) ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A TSD30H TSD30H TSD30H TSD30H PARAMETER SYMBOL UNIT 100CW 120CW 150CW 200CW TSD30H TSD30H TSD30H TSD30H Marking code on the device 100CW 120CW 150CW 200CW Repetitive peak reverse voltage V 100 120 150 200 V RRM Reverse voltage, total rms value V 70 84 105 140 V R(RMS) per device 30 A Forward current I F per diode 15 A Peak forward surge current, 8.3ms single I 200 A FSM half sine-wave superimposed on rated load Critical rate of rise of off-state voltage dV/dt 10,000 V/s Junction temperature - 55 to +150 C T J Storage temperature T - 55 to +150 C STG 1 Version: D2009 TSD30H100CW TSD30H200CW Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT Junction-to-case thermal resistance R 2.8 C/W JC ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL TYP MAX UNIT I = 15A, T = 25C 0.69 0.78 V F J TSD30H100CW I = 15A, T = 125C 0.61 0.68 V F J I = 15A, T = 25C 0.75 0.84 V F J TSD30H120CW I = 15A, T = 125C 0.64 0.73 V F J Forward voltage per V (1) F diode I = 15A, T = 25C 0.81 0.90 V F J TSD30H150CW I = 15A, T = 125C 0.68 0.77 V F J I = 15A, T = 25C 0.84 0.92 V F J TSD30H200CW I = 15A, T = 125C 0.70 0.79 V F J T = 25C - 250 A J TSD30H100CW TSD30H120CW T = 125C 10 35 mA J Reverse current I (2) R rated V per diode R T = 25C - 150 A J TSD30H150CW TSD30H200CW T = 125C 3 20 mA J Notes: 1. Pulse test with PW = 0.3ms 2. Pulse test with PW = 30ms ORDERING INFORMATION (1) ORDERING CODE PACKAGE PACKING 2 TSD30HxCW C0G TO-263AB (D PAK) 50 / Tube 2 TSD30HxCW MNG TO-263AB (D PAK) 800 / 13 reel Notes: 1. defines voltage from 100V(TSD30H100CW) to 200V(TSD30H200CW) 2 Version: D2009

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

Taiwan Semiconductor may also be referenced as

TAIWAN SEMI
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)

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