TSM4436 60V N-Channel MOSFET SOP-8 Pin Definition: PRODUCT SUMMARY 1. Source 8. Drain 2. Source 7. Drain V (V) R (m) I (A) DS DS(on) D 3. Source 6. Drain 36 V = 10V 4.6 GS 4. Gate 5. Drain 60 43 V = 4.5V 4.2 GS Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application High-Side DC/DC Conversion Notebook Severp Ordering Information Part No. Package Packing N-Channel MOSFET TSM4436CS RLG SOP-8 2,500pcs / 13 Reel Note: G denote for Green Product o Absolute Maximum Rating (Ta = 25 C unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V 60 V DS Gate-Source Voltage V 20 V GS Continuous Drain Current I 8 A D Pulsed Drain Current I 25 A DM a,b Continuous Source Current (Diode Conduction) I 2.1 A S o Ta = 25 C 2.5 Maximum Power Dissipation P W D o Ta = 05 C 1.6 Operating Junction Temperature T +150 C J Operating Junction and Storage Temperature Range T , T - 55 to +150 C J STG Thermal Performance Parameter Symbol Limit Unit Junction to Case Thermal Resistance R 25 C/W JF Junction to Ambient Thermal Resistance (PCB mounted) R 50 C/W JA Notes: a. Pulse width limited by the Maximum junction temperature b. Surface Mounted on FR4 Board, t 10 sec. Document Number: DS P0000096 1 Version: B15 TSM4436 60V N-Channel MOSFET Electrical Specifications Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage V = 0V, I = 250uA BV 60 -- -- V GS D DSS Gate Threshold Voltage V = V , I = 250A V 1 -- 3 V DS GS D GS(TH) Gate Body Leakage V = 20V, V = 0V I -- -- 100 nA GS DS GSS Zero Gate Voltage Drain Current V = 60V, V = 0V I -- -- 2 A DS GS DSS a On-State Drain Current V = 5V, V = 10V I 20 -- -- A DS GS D(ON) V = 10V, I = 4.6A -- 30 36 GS D a Drain-Source On-State Resistance R m DS(ON) V = 4.5V, I = 4.2A -- 35 43 GS D a Forward Transconductance V = 15V, I = 4.5A g -- 13 -- S DS D fs Diode Forward Voltage I = 2A, V = 0V V -- 0.9 1.2 V S GS SD b Dynamic Total Gate Charge Q -- 10.5 16 g V = 30V, I = 4.6A, DS D nC Gate-Source Charge Q -- 3.5 -- gs V = 4.5V GS Gate-Drain Charge Q -- 4.2 -- gd Input Capacitance C -- 1100 -- iss V = 30V, V = 0V, DS GS pF Output Capacitance C -- 90 -- oss f = 1.0MHz Reverse Transfer Capacitance C -- 55 -- rss c Switching Turn-On Delay Time t -- 10 15 d(on) V = 30V, R = 5.4, DD L Turn-On Rise Time t -- 15 25 r I = 5.6A, V = 10V, nS D GEN Turn-Off Delay Time t -- 25 40 d(off) R = 1 G Turn-Off Fall Time t -- 10 15 f Notes: a. pulse test: PW 300S, duty cycle 2% b. For DESIGN AID ONLY, not subject to production testing. b. Switching time is essentially independent of operating temperature. Document Number: DS P0000096 2 Version: B15