Product Information

STH290N4F6-2AG

STH290N4F6-2AG electronic component of STMicroelectronics

Datasheet
MOSFET Automotive-grade N-channel 40 V 1.3 mOhm typ. 180 A STripFET F6 Power MOSFET in H2PAK-2 package
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 8.5318 ea
Line Total: USD 8.53

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

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Availability Price Quantity
0 - WHS 1


Ships to you between Wed. 22 May to Fri. 24 May

MOQ : 1
Multiples : 1

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STH290N4F6-2AG
STMicroelectronics

1 : USD 8.5318
10 : USD 3.0448
100 : USD 2.8164
250 : USD 2.6769
500 : USD 2.5881
1000 : USD 2.2963

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
Tradename
Configuration
Series
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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Additional Infomation About Product

STH290N4F6-2AG, STH290N4F6-6AG Automotive-grade N-channel 40 V, 1.3 m typ., 180 A STripFET F6 Power MOSFETs in HPAK-2 and HPAK-6 packages Datasheet - production data Features R DS(on) Order code V I P DS D TOT max. STH290N4F6-2AG 40 V 1.7 m 180 A 300 W STH290N4F6-6AG Designed for automotive applications and AEC-Q101 qualified Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss Figure 1: Internal schematic diagram Applications Switching applications Description This device is an N-channel Power MOSFET developed using the STripFET F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low R in all DS(on) packages. Table 1: Device summary Order code Marking Package Packing STH290N4F6-2AG HPAK-2 290N4F6 Tape and Reel STH290N4F6-6AG HPAK-6 July 2015 DocID027971 Rev 1 1/19 www.st.com This is information on a product in full production. Contents STH290N4F6-2AG, STH290N4F6-6AG Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 HPAK-2 package information ......................................................... 10 4.2 HPAK-6 package information ......................................................... 13 4.3 HPAK packing information ............................................................. 16 5 Revision history ............................................................................ 18 2/19 DocID027971 Rev 1

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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