TSM60N1R4 600V, 3.3A, 1.4 N-Channel Power MOSFET TO-252 TO-251 Pin Definition: Key Parameter Performance 1. Gate (DPAK) (IPAK) 2. Drain Parameter Value Unit 3. Source V 600 V DS R (max) 1.4 DS(on) Q g 7.7 nC Block Diagram Features Super-Junction technology High performance due to small figure-of-merit High ruggedness performance High commutation performance Application Power Supply Lighting Ordering Information Part No. Package Packing N-Channel MOSFET TSM60N1R4CH C5G TO-251 75pcs / Tube TSM60N1R4CP ROG TO-252 2.5kpcs / 13 Reel Note: G denotes for Halogen- and Antimony-free as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds Absolute Maximum Ratings (T = 25C unless otherwise noted) C Limit Parameter Symbol Unit Drain-Source Voltage V 600 V DS Gate-Source Voltage V 30 V GS (Note 1) Continuous Drain Current T = 25C I 3.3 A C D (Note 2) Pulsed Drain Current I 9.9 A DM Total Power Dissipation T = 25C P 38 W C DTOT (Note 3) Single Pulsed Avalanche Energy E 64 mJ AS (Note 3) Single Pulsed Avalanche Current I 1.6 A AS Operating Junction and Storage Temperature Range T , T - 55 to +150 C J STG Thermal Performance Parameter Symbol Limit Unit Junction to Case Thermal Resistance R 3.3 C/W JC Junction to Ambient Thermal Resistance R 62 C/W JA 1/7 Version: A14 TSM60N1R4 600V, 3.3A, 1.4 N-Channel Power MOSFET Electrical Specifications (T = 25C unless otherwise noted) C Parameter Conditions Symbol Min Typ Max Unit (Note 4) Static Drain-Source Breakdown Voltage V = 0V, I = 250A BV 600 -- -- GS D DSS V Gate Threshold Voltage V = V , I = 250A V 2 3 4 DS GS D GS(TH) V Gate Body Leakage V = 30V, V = 0V I -- -- 100 GS DS GSS nA Zero Gate Voltage Drain Current V = 600V, V = 0V I -- -- 1 DS GS DSS A V = 10V, I = 2A -- 0.88 1.4 Drain-Source On-State Resistance R GS D DS(ON) (Note 5) Dynamic Total Gate Charge Q -- 7.7 -- g V = 380V, I = 3.3A, DS D Gate-Source Charge Q -- 1.9 -- nC gs V = 10V GS Gate-Drain Charge Q -- 2.8 -- gd Input Capacitance C -- 370 -- iss V = 100V, V = 0V, DS GS pF f = 1.0MHz Output Capacitance C -- 34 -- oss Gate Resistance f = 1MHz, open drain R -- 3.4 -- g (Note 6) Switching Turn-On Delay Time t -- 14 -- d(on) V = 380V, DD Turn-On Rise Time t -- 22 -- r R = 25, ns GEN Turn-Off Delay Time t -- 24 -- d(off) I = 3.3A, V = 10V, D GS Turn-Off Fall Time t -- 20 -- f (Note 4) Source-Drain Diode Forward On Voltage -- -- 1.4 V I = 3.3A, V = 0V V S GS SD Reverse Recovery Time -- 163 -- ns t rr V = 200V, I = 2A R S Reverse Recovery Charge -- 1 -- C dI /dt = 100A/s Q F rr Notes: 1. Current limited by package 2. Pulse width limited by the maximum junction temperature 3. L = 50mH, I = 1.6A, V = 50V, R = 25, Starting T = 25C AS DD G J 4. Pulse test: PW d 300s, duty cycle d 2% 5. For DESIGN AID ONLY, not subject to production testing. 6. Switching time is essentially independent of operating temperature. 2/7 Version: A14