Product Information

TSS0340U RGG

TSS0340U RGG electronic component of Taiwan Semiconductor

Datasheet
Schottky Diodes & Rectifiers 603 45V 0.03A Schott ky Diode

Manufacturer: Taiwan Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.7425 ea
Line Total: USD 0.74

21513 - Global Stock
Ships to you between
Thu. 30 May to Mon. 03 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
11735 - WHS 1


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1

Stock Image

TSS0340U RGG
Taiwan Semiconductor

1 : USD 0.3887
10 : USD 0.2748
100 : USD 0.1139
1000 : USD 0.0747
4000 : USD 0.0736
8000 : USD 0.0701
24000 : USD 0.061
48000 : USD 0.0564
100000 : USD 0.0529

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Product Type
Factory Pack Quantity :
Subcategory
Vr - Reverse Voltage
Hts Code
LoadingGif

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TSS0340U Taiwan Semiconductor Small Signal Product Surface Mount Schottky Barrier FEATURES - Designed for mounting on small surface - Extremely thin/leadless package - Low capacitance - Low forward voltage drop - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 0603 MECHANICAL DATA - Case: 0603 - Terminal: Gold plated, solderable per MIL-STD-750, method 2026 - Polarity : Indicated by cathode band - Weight : 3 mg (approximately) - Marking code: B2 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T =25C unless otherwise noted) A PARAMETER SYMBOL VALUE UNIT Repetitive Peak Reverse Voltage V 45 V RRM DC Reverse Voltage V 40 V R Average Forward Current I 30 mA O Peak Forward Surge Current 8.3 ms Single Half I 500 mA FSM Sine-Wave Superimposed on Rate Load Power Dissipation 150 Pd mW Forward Voltage I = 1 mA V 0.37 V F F V =30V 0.5 R I Reverse Leakage Current A R V =40V 1.0 R Typical Capacitance Between Terminals C 1.5 pF J V =1V, f =1.0MHz Reverse Voltage R Junction Temperature T -40 to +125 C J Storage Temperature T -40 to +125 C STG Version: D1604TSS0340U Taiwan Semiconductor Small Signal Product RATINGS AND CHARACTERISTICS CURVES (T =25C unless otherwise noted) A Fig. 2 Typical Reverse Characteristics Fig.1 Maximum Forward Current Derating Curve 100 125 T =125C J 100 10 T =75C 75 J 1 50 T =25C J 0.1 25 0.01 0 Fig. 4 0 20 40 60 80 100 120 140 0 25 50 75 100 125 Percent of Rated Peak Reverse voltage (%) Case Temperature (C) Fig. 3 Maximum Non-Repetitive Forward Surge Current Fig. 5 Fig. 4 Typical Junction Capacitance o 625 125 C 4.5 o 8.3 ms single half sine wave 500 75 C 3 o 375 25 C o 250 -25 C 1.5 125 0 0 1 10 100 0.1 1 10 100 Number of Cycles at 60Hz Reverse Voltage (V) Fig. 5 Forward Characteristics Curve 100 10 125C 75C 1 -25C 0.1 25C 0.01 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 V , Instantaneous Forward Voltage (V) F Version: D1604 Peak Forward Surge Current (mA) I , Instantaneous Forward Current (mA) F Average Forward current (%) Instantaneous Reverse Current ( A) Capacitance (pF)

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
TAIWAN SEMI
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)

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