Product Information

TST30H100CW C0G

TST30H100CW C0G electronic component of Taiwan Semiconductor

Datasheet
Schottky Barrier Diodes (SBD) TO-220AB RoHS

Manufacturer: Taiwan Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.4268 ea
Line Total: USD 0.43

847 - Global Stock
Ships to you between
Mon. 06 May to Fri. 10 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
847 - Global Stock


Ships to you between Mon. 06 May to Fri. 10 May

MOQ : 1
Multiples : 1

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TST30H100CW C0G
Taiwan Semiconductor

1 : USD 0.4268

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Series
Brand
Product Type
Factory Pack Quantity :
Subcategory
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TST30H100CW thru TST30H200CW Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Low power loss/ high efficiency - High forward surge capability - Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition TO-220AB TYPICAL APPLICATIONS Trench Schottky barrier rectifier are designed for high frequency miniature switched mode power supplies such as adapters, lighting and on-board DC/DC converters. MECHANICAL DATA Case: TO-220AB Molding compound meets UL 94 V-0 flammability rating Packing code with suffix menas green compound (halogen-free) Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker test Polarity: As marked Mounting torque: 0.56 Nm max. Weight: 1.88 g (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A TST30H TST30H TST30H TST30H PARAMETER SYMBOL UNIT 100CW 120CW 150CW 200CW V Maximum repetitive peak reverse voltage 100 120 150 200 V RRM per device 30 Maximum average I A F(AV) forward rectified current per diode 15 Peak forward surge current, 8.3 ms single half I 200 A FSM sine-wave superimposed on rated load per diode Voltage rate of change (Rated V ) 10000 dV/dt V/s R TYP MAX TYP MAX TYP MAX TYP MAX T = 25C 0.69 0.78 0.75 0.88 0.81 0.90 0.84 0.92 Instantaneous forward J I = 15A V V F F voltage per diode (Note1) T = 125C 0.61 0.68 0.64 0.75 0.68 0.77 0.70 0.79 J T = 25C - 250 - 250 - 150 - 150 A Instantaneous reverse current per J I R diode at rated reverse voltage T = 125C 10 35 10 35 3 20 3 20 mA J Typical thermal resistance per diode R 2.2 3 C/W JC Operating junction temperature range T - 55 to +150 C J Storage temperature range T - 55 to +150 C STG Note 1: Pulse test with pulse width=300s, 1% duty cycle Document Number: DS D1411059 Version: E14TST30H100CW thru TST30H200CW Taiwan Semiconductor ORDERING INFORMATION PACKING PACKING CODE PART NO. PACKAGE PACKING CODE SUFFIX TST30HXXXCW C0 G TO-220AB 50 / Tube (Note 1) Note 1:XX defines voltage from 100V (TST30H100CW) to 200V (TST30H200CW) EXAMPLE PREFERRED PACKING PACKING CODE PART NO. DESCRIPTION PART NO. CODE SUFFIX TST30H120CW C0G TST30H120CW C0 G Green compound RATINGS AND CHARACTERISTICS CURVES (T = 25C unless otherwise noted) A FIG. 2 TYPICAL FORWARD CHARACTERISTICS FIG. 1 FORWARD CURRENT DERATING CURVE 35 10 0 TST30H100CW TST30H100CW TST30H120CW 30 10 o 25 T=150 C J TST30H150CW o T=125 C 20 J TST30H200CW 1 15 o T=100 C J 10 WITH HEATSINK 0.1 3in x 5in x 0.25in o T=25 C Al-Plate J 5 0 0.0 1 0 255075 100 125 150 0 0.2 0.4 0.6 0.8 1 o FORWARD VOLTAGE (V) CASE TEMPERATURE ( C) FIG. 4 TYPICAL FORWARD CHARACTERISTICS FIG. 3 TYPICAL FORWARD CHARACTERISTICS 10 0 10 0 TST30H120CW TST30H150CW 10 10 o T=150 C J o T=150 C J o T=125 C J o T=125 C J 1 1 o T=100 C J o T=100 C J 0.1 0.1 o T=25 C J o T=25 C J 0.0 1 0.0 1 0 0.2 0.4 0.6 0.8 1 0 0.2 0.4 0.6 0.8 1 FORWARD VOLTAGE (V) FORWARD VOLTAGE (V) Document Number: DS D1411059 Version: E14 INSTANTANEOUS FORWARD CURRENT (A) AVERAGE FORWARD CURRENT (A) INSTANTANEOUS FORWARD CURRENT (A) INSTANTANEOUS FORWARD CURRENT (A)

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
TAIWAN SEMI
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)

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