Product Information

UF1JLW RVG

UF1JLW RVG electronic component of Taiwan Semiconductor

Datasheet
Rectifiers 25ns 1A 600V Ultra Fast Recovery Rectifier

Manufacturer: Taiwan Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.2148 ea
Line Total: USD 0.21

2 - Global Stock
Ships to you between
Fri. 17 May to Thu. 23 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2 - WHS 1


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 1
Multiples : 1

Stock Image

UF1JLW RVG
Taiwan Semiconductor

1 : USD 0.016

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Vr - Reverse Voltage
If - Forward Current
Type
Configuration
Vf - Forward Voltage
Max Surge Current
Ir - Reverse Current
Recovery Time
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Product
Brand
Product Type
Factory Pack Quantity :
Subcategory
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UF1DLW - UF1JLW Taiwan Semiconductor 1A, 200V - 600V Surface Mount Ultra Fast Rectifiers FEATURES KEY PARAMETERS PARAMETER VALUE UNIT Ideal for automated placement I 1 A F(AV) Ultra fast recovery time for high V efficiency 200-600 V RRM Compliant to RoHS Directive 2011/65/EU and I FSM 30 A in accordance to WEEE 2002/96/EC T 150 C Halogen-free according to IEC 61249-2-21 J MAX Package SOD-123W Configuration Single dice APPLICATIONS For use in high voltage, high frequency power factor corrections, switching mode power supplies, freewheeling diodes and secondary dc to dc rectifications MECHANICAL DATA Case: SOD-123W Molding compound, UL flammability classification rating 94V-0 Moisture sensitivity level: level 1, per J-STD-020 Part No. with suffix means AEC-Q101 qualified Packing code with suffix means green compound (halogen-free) Terminal: Matte tin plated leads, solderable per J-STD-002 SOD-123W Meet JESD 201 class 2 whisker test Polarity: Indicated by cathode band Weight: 16 mg (approximately) ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A PARAMETER SYMBOL UF1DLW UF1GLW UF1JLW UNIT Marking code on the device UDLW UGLW UJLW Maximum repetitive peak reverse voltage V 200 400 600 V RRM Maximum RMS voltage V 140 280 420 V RMS Maximum DC blocking voltage V 200 400 600 V DC Maximum average forward rectified current I 1 A F(AV) Peak forward surge current, 8.3 ms single half sine-wave I 30 A FSM superimposed on rated load Operating Junction and Storage Temperature Range T , T - 55 to +150 C J STG 1 Version:B1907 UF1DLW - UF1JLW Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT Junction to Lead Thermal Resistance R 28 C/W JL Junction to Ambient Thermal Resistance R 88 C/W JA Junction to Case Thermal Resistance R 38 C/W JC Thermal Performance Note: Units mounted on recommended PCB (5mm x 5mm Cu test board) ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL TYP MAX UNIT Maximum instantaneous UF1DLW - 0.95 I = 1A forward voltage UF1GLW V - 1.25 V F F (Note 1) UF1JLW - 1.5 T = 25C - J 1 A Maximum reverse current I R rated V (Note 2) T = 125C - R 50 A J 40 - UF1DLW Junction capacitance UF1GLW 1 MHz, V =4.0V C 25 - pF R J UF1JLW 15 - UF1DLW 20 I =0.5A , I =1.0A F R Reverse recovery time UF1GLW t - 20 ns rr I =0.25A RR UF1JLW 25 Notes: 1. Pulse test with PW=0.3 ms 2. Pulse test with PW=30 ms 2 Version:B1907

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
TAIWAN SEMI
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)

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