Product Information

US1G

US1G electronic component of Taiwan Semiconductor

Datasheet
Taiwan Semiconductor TVS Diodes - Transient Voltage Suppressors 1500W 20V 5% UNI TRANSZORB-TVS
Manufacturer: Taiwan Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.6299 ea
Line Total: USD 0.63

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

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Availability Price Quantity
0 - WHS 1


Ships to you between Tue. 28 May to Thu. 30 May

MOQ : 1
Multiples : 1

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US1G
Taiwan Semiconductor

1 : USD 0.4474
10 : USD 0.3151
100 : USD 0.1587
1000 : USD 0.0978
2500 : USD 0.0851
7500 : USD 0.0713
22500 : USD 0.0701
45000 : USD 0.0633

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RoHS - XON
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Additional Infomation About Product

US1A US1M Taiwan Semiconductor 1A, 50V - 1000V High Efficient Surface Mount Rectifier FEATURES KEY PARAMETERS Glass passivated chip junction PARAMETER VALUE UNIT Ideal for automated placement I 1 A F Low forward voltage drop V 50 - 1000 V RRM Ultrafast recovery time for high efficiency Moisture sensitivity level: level 1, per J-STD-020 I 30 A FSM RoHS Compliant T 150 C J MAX Halogen-free according to IEC 61249-2-21 Package DO-214AC (SMA) Configuration Single die APPLICATIONS DC to DC converter Switching mode converters and inverters Lighting application Snubber Freewheeling application MECHANICAL DATA Case: DO-214AC (SMA) Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 2 whisker test DO-214AC (SMA) Polarity: Indicated by cathode band Weight: 0.060g (approximately) ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A PARAMETER SYMBOL US1A US1B US1D US1G US1J US1K US1M UNIT Marking code on the device US1A US1B US1D US1G US1J US1K US1M Repetitive peak reverse voltage V 50 100 200 400 600 800 1000 V RRM Reverse voltage, total rms value V 35 70 140 280 420 560 700 V R(RMS) Forward current I 1 A F Peak forward surge current, 8.3ms single half sine-wave I 30 A FSM superimposed on rated load Junction temperature T - 55 to +150 C J Storage temperature T - 55 to +150 C STG 1 Version: N2102 US1A US1M Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT Junction-to-lead thermal resistance R 27 C/W JL Junction-to-ambient thermal resistance R 75 C/W JA ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL TYP MAX UNIT US1A US1B - 1.0 V US1D (1) Forward voltage US1G I = 1A, T = 25C V F J F US1J US1K - 1.7 V US1M T = 25C - 5 A J (2) Reverse current rated V I R R T = 125C - 150 A J US1A US1B 15 - pF US1D Junction capacitance US1G 1MHz, V = 4.0V C R J US1J US1K 10 - pF US1M US1A US1B - 50 ns US1D I = 0.5A, I = 1.0A, F R Reverse recovery time US1G t rr I = 0.25A rr US1J US1K - 75 ns US1M Notes: 1. Pulse test with PW = 0.3ms 2. Pulse test with PW = 30ms ORDERING INFORMATION (1) ORDERING CODE PACKAGE PACKING US1x DO-214AC (SMA) 7,500 / Tape & Reel Notes: 1. x defines voltage from 50V(US1A) to 1000V(US1M) 2 Version: N2102

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

Taiwan Semiconductor may also be referenced as

TAIWAN SEMI
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)

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