TECHNOLOGY BRIEF: TB002 eGaN TECHNOLOGY eGaN FETs for Ultra-High Frequency EFFICIENT POWER CONVERSION Power Conversion eGaN FETs Optimized for High Frequency Applications Hard switching power conversion at 10 MHz and above requires both high speed eGaN FETs and a circuit that supports low common source inductance and power loop inductance. The ultra high speed capabilities and improved device pinout of the EPC8000 series of gallium nitride transistors enable this class of converters in applications such as envelope tracking and wireless power trans- mission. These eGaN FETs can achieve switching transition speeds in the sub-nano seconds range, and the gate drive loop and drain-source power path are designed for ultra low inductance. Gate Voltage V V GS 5 Bump side image of FET 4 3 High Frequency Footprint 2 Separate gate return (source) connection Low inductance gate connection 40 V EPC80xx 1 EPC2014 (1/10th) High dv/dt immunity Orthogonal gate and drain circuit connections 0 0 50 100 150 200 250 300 350 Low internal parasitic Inductances Gate Charge Q pC G Reduced Q for faster switching GD Gate charge of the 40 V EPC80xx series device compared with the EPC2014 scaled to 1/10th of its active area. Design Example: 10 MHz Envelope Tracking Converter 95% 42 V to 20 V, 40 W buck converter operating at 10 MHz 5 MHz This family of devices is capable of greater than 10 MHz operation. 90% Efficiency of both 5 MHz and 10 MHz operation is shown in the figure to the right. 10 MHz 85% With mobile communications traffic increasing by 70% in 2012 and over 10x by 2017, envelope tracking will provide a high efficiency RF solution. 80% The eGaN FET, with very low propagation delay, and high frequency capability, and high efficiency is a key enabler of envelope tracking 75% converters which dramatically increases RF power amplifier efficiency. 70% 65% 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 EPC EFFICIENT POWER CONVERSION CORPORATION WWW.EPC-CO.COM COPYRIGHT 2017 1 E ciencyTECHNOLOGY BRIEF: TB002 eGaN TECHNOLOGY EPC8000 Product Family This family of products is available in R values from 110 m through 480 m, and three blocking voltage capabilities, 40 V, 65 V and 100 V. DS(on) Peak I Min D Typical Capacitance (pF) R Max (m) DS(ON) Typical Charge (pC) Part (A) (V = BV/2, V = 0 V) DS GS BV (V) (V = 5V, DSS GS Number (Pulsed, 25 C, I = 0.5 A) Q Q Q Q Q C C C D G GD GS OSS RR ISS OSS RSS T = 300 s) pulse EPC8004 40 110 7.5 370 47 120 630 0 45 23 0.8 EPC8002 65 480 2 133 15 57 344 0 20 6.7 0.12 EPC8009 65 130 7.5 370 55 120 940 0 45 19 0.5 EPC8010 100 160 7.5 360 60 130 2200 0 43 25 0.3 * Preliminary Data - subject to change without notice Design Example: Wireless Power Transfer 84% 6.78 MHz Class D Wireless Power Transfer 82% 80% One of the most exciting applications to emerge in the past few years is 78% wireless energy transmission. 76% eGaN FETs, due to their ability to operate at high frequency, is an enabling 74% technology for wireless energy transfer. 72% EPC8009 ZVS-CD EPC2012 SE-CE 70% eGaN FETs enable the highest efficiencies in all topologies using 6.78 MHz EPC2014 VM-CD 68% EPC2016 CM-CD and 13.56 MHz frequencies. 66% 64% 0 5 10 15 20 25 30 35 40 Output Power W ZVS-CD = Zero Voltage Switched Class-D SE-CE = Single Ended Class-E CM-CD = Current Mode Class-D VM-CD = Voltage Mode Class-D Applications More Information at epc-co.com 10 MHz power supply Application Note: Introducing Family of eGaN FETs for Multi-MHz Hard Switch- ing Applications Envelope Tracking or Drain modulation in RF Power Amplifiers EPC eGaN FET Product Line: epc-co.com/epc/Products/eGaNFETs.aspx Class D or E wireless charging for tablets and laptops eGaN FET Demo Boards: epc-co.com/epc/Products/DemoBoards.aspx Device Models: epc-co.com/epc/DesignSupport/DeviceModels.aspx For More Information Please contact info epc-co.com or your local sales representative Visit our website: epc-co.com Sign-up to receive EPC updates at eGaN is a registered trademark of Efficient Power Conversion Corporation bit.ly/EPCupdates or text EPC to 22828 EFFICIENT POWER CONVERSION EPC THE LEADER IN GaN TECHNOLOGY WWW.EPC-CO.COM COPYRIGHT 2017 PAGE 2 E ciency