FDN338P TECH PUBLIC

FDN338P electronic component of TECH PUBLIC
FDN338P TECH PUBLIC
FDN338P MOSFETs
FDN338P  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of FDN338P MOSFETs across the USA, India, Europe, Australia, and various other global locations. FDN338P MOSFETs are a product manufactured by TECH PUBLIC. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. FDN338P
Manufacturer: TECH PUBLIC
Category: MOSFETs
Description: SOT-23 MOSFETs ROHS
Datasheet: FDN338P Datasheet (PDF)
Price (USD)
10: USD 0.0922 ea
Line Total: USD 0.92 
Availability : 8603
  
Ship by Thu. 23 Oct to Wed. 29 Oct
QtyUnit Price
10$ 0.0922
100$ 0.0732
300$ 0.0638
3000$ 0.0358
6000$ 0.0319
9000$ 0.0301

Availability 8603
Ship by Thu. 23 Oct to Wed. 29 Oct
MOQ : 10
Multiples : 10
QtyUnit Price
10$ 0.0922
100$ 0.0732
300$ 0.0638
3000$ 0.0358
6000$ 0.0319
9000$ 0.0301

   
Manufacturer
Product Category
Category
Rohs
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We are delighted to provide the FDN338P from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FDN338P and other electronic components in the MOSFETs category and beyond.

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The FDN338P with SOT-23 MOSFETs ROHS is a N-channel depletion mode field effect transistor (FET) manufactured by Tech Public. It is designed to offer low on-resistance at a very small footprint, making it an ideal solution for space-constrained applications. This MOSFET comes in a RoHS-compliant, small outline package and utilizes current-balancing technology to optimize power dissipation and efficiency. The device features an NVth (threshold voltage) of 1.3V, a drain-source resistance of 4.2 ohms, and a gate-source capacitance of 200pF. The FDN338P is suitable for use in switching and reversal protection, boosting circuits, and other related applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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