XC8109 Series ETR33004-002 85m High Function Power Switch GENERAL DESCRIPTION The XC8109 series is a P-channel MOSFET power switch IC with a low ON resistance. A current limit, reverse current prevention (prevents reverse current from V to V ), soft start, thermal shutdown, and an under voltage lockout (UVLO) are OUT IN incorporated as protective functions. A flag function monitors the power switch status. The flag output has N-channel open drain structure, and outputs Low level signal while over-current or overheating is detected, or while the reverse current prevention is operated. A variable current limiting function is integrated, allowing the current limit value to be set, using an external resistor. The voltage level which is fed to CE pin determines the status of XC8109. The logic level of CE pin is selectable between either one of active high or active low. APPLICATIONS FEATURES Input Voltage : 2.5V5.5V Set Top Boxes Maximum Output Current : 0.9A Digital TVs ON Resistance : 85m V =5.0V (TYP.) IN PCs Supply Current : 40A VIN=5.0V Stand-by Current : 0.1A (TYP.) USB Ports/USB Hubs Flag Delay Time : 7.5ms (TYP.) HDMI * At over-current detection : 4ms (TYP.) * At reverse voltage detection Protection Circuit : Reverse Current Prevention 75mA1.3A (TYP.) Thermal Shutdown Under Voltage Lockout (UVLO Soft-start Functions : Flag Output CE Pin Input Logic Selectable Current Limit Response Time : 2s (TYP.) *Reference value Operating Ambient Temperature : -40+105 Package : USP-6C Environmentally Friendly : EU RoHS Compliant, Pb Free TYPICAL PERFORMANCE TYPICAL APPLICATION CIRCUIT CHARACTERISTICS XC8109xC10ER C =1.0F(ceramic), C =1.0F(ceramic) IN L 6.0 RILIM=515k RILIM=18.4k 5.0 RILIM=0k 4.0 3.0 2.0 * The Typical circuit is base on USB high side switch. The XC8109 series can accommodate 1F output capacitor (C ). L 1.0 0.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 Output Current : I A OUT 1/27 Output Voltage : VOUT V XC8109 Series BLOCK DIAGRAM XC8109 Series * Diodes inside the circuit are an ESD protection diode and a parasitic diode. 2/27