1SS306 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS306 Unit: mm Ultra High Speed Switching Application Small package : SC-61 Low forward voltage : V = 0.90 V (typ.) F (2) Fast reverse recovery time : t = 30 ns (typ.) rr Small total capacitance : C = 1.5 pF (typ.) T Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage V V 1. CATHODE 1 RM 250 2. CATHODE 2 Reverse voltage VR V 200 3. ANODE 2 Maximum (peak) forward current IFM 300 * mA SMQ 4. ANODE 1 Average forward current IO 100 * mA JEDEC Surge current (10ms) IFSM 2 * A JEITA SC-61 PD (Note 1, 3) 200 Power dissipation mW TOSHIBA 2-3J1S PD (Note 2) 150 Weight: 0.013 g (typ.) Tj (Note 1) 150 Junction temperature C Tj (Note 2) 125 Tstg (Note 1) 55 to 150 Storage temperature C Tstg (Note 2) 55 to 125 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: For devices with the ordering part number ending in LF(T. Note 2: For devices with the ordering part number in other than LF(T. 2 2 Note 3: Total rating, Mounted on a FR4 board. (25.4 mm 25.4 mm 1.6 mm, Cu pad: 1.215 mm 3 + 1.15 mm ) *: Unit rating. Total rating = Unit rating 1.5. Start of commercial production 1986-10 2020-2021 2021-06-25 1 Toshiba Electronic Devices & Storage Corporation 1SS306 Electrical Characteristics (Ta = 25C) Characteristic Symbol Test Condition Min Typ. Max Unit V I = 10 mA 0.72 1.0 F (1) F Forward voltage V V I = 100 mA 0.9 1.2 F (2) F I V = 50 V 0.1 R (1) R Reverse current A I V = 200 V 1.0 R (2) R Total capacitance C V = 0 V, f = 1 MHz 1.5 3.0 pF T R Reverse recovery time t I = 10 mA, Fig.1 30 60 ns rr F Marking 2 1 A 3 3 4 Equivalent circuit (Top view) 2 1 3 4 OUTPUT Fig.1 Reverse recovery time (t ) test circuit rr 2020-2021 2021-06-25 2 Toshiba Electronic Devices & Storage Corporation