X-On Electronics has gained recognition as a prominent supplier of 1SS306TE85LF Small Signal Switching Diodes across the USA, India, Europe, Australia, and various other global locations. 1SS306TE85LF Small Signal Switching Diodes are a product manufactured by Toshiba. We provide cost-effective solutions for Small Signal Switching Diodes, ensuring timely deliveries around the world.

1SS306TE85LF Toshiba

1SS306TE85LF electronic component of Toshiba
1SS306TE85LF Toshiba
1SS306TE85LF Small Signal Switching Diodes
1SS306TE85LF  Semiconductors

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See Product Specifications
Part No. 1SS306TE85LF
Manufacturer: Toshiba
Category: Small Signal Switching Diodes
Description: Small Signal Switching Diodes 0.1A 200V Switching High-Speed Diode
Datasheet: 1SS306TE85LF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.975 ea
Line Total: USD 1.98 
Availability - 22294
Ship by Tue. 22 Jul to Thu. 24 Jul
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
22294
Ship by Tue. 22 Jul to Thu. 24 Jul
MOQ : 1
Multiples : 1
1 : USD 1.975
10 : USD 1.332
100 : USD 0.9009
500 : USD 0.8987
3000 : USD 0.8987

   
Manufacturer
Product Category
Product
Mounting Style
Peak Reverse Voltage
Max Surge Current
If - Forward Current
Configuration
Recovery Time
Vf - Forward Voltage
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Package / Case
Hts Code
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 1SS306TE85LF from our Small Signal Switching Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 1SS306TE85LF and other electronic components in the Small Signal Switching Diodes category and beyond.

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1SS306 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS306 Unit: mm Ultra High Speed Switching Application Small package : SC-61 Low forward voltage : V = 0.90 V (typ.) F (2) Fast reverse recovery time : t = 30 ns (typ.) rr Small total capacitance : C = 1.5 pF (typ.) T Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage V V 1. CATHODE 1 RM 250 2. CATHODE 2 Reverse voltage VR V 200 3. ANODE 2 Maximum (peak) forward current IFM 300 * mA SMQ 4. ANODE 1 Average forward current IO 100 * mA JEDEC Surge current (10ms) IFSM 2 * A JEITA SC-61 PD (Note 1, 3) 200 Power dissipation mW TOSHIBA 2-3J1S PD (Note 2) 150 Weight: 0.013 g (typ.) Tj (Note 1) 150 Junction temperature C Tj (Note 2) 125 Tstg (Note 1) 55 to 150 Storage temperature C Tstg (Note 2) 55 to 125 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: For devices with the ordering part number ending in LF(T. Note 2: For devices with the ordering part number in other than LF(T. 2 2 Note 3: Total rating, Mounted on a FR4 board. (25.4 mm 25.4 mm 1.6 mm, Cu pad: 1.215 mm 3 + 1.15 mm ) *: Unit rating. Total rating = Unit rating 1.5. Start of commercial production 1986-10 2020-2021 2021-06-25 1 Toshiba Electronic Devices & Storage Corporation 1SS306 Electrical Characteristics (Ta = 25C) Characteristic Symbol Test Condition Min Typ. Max Unit V I = 10 mA 0.72 1.0 F (1) F Forward voltage V V I = 100 mA 0.9 1.2 F (2) F I V = 50 V 0.1 R (1) R Reverse current A I V = 200 V 1.0 R (2) R Total capacitance C V = 0 V, f = 1 MHz 1.5 3.0 pF T R Reverse recovery time t I = 10 mA, Fig.1 30 60 ns rr F Marking 2 1 A 3 3 4 Equivalent circuit (Top view) 2 1 3 4 OUTPUT Fig.1 Reverse recovery time (t ) test circuit rr 2020-2021 2021-06-25 2 Toshiba Electronic Devices & Storage Corporation

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4
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