Product Information

1SS307E,L3F

Name: 1SS307E,L3F
Brand: Toshiba
SKU: 1SS307EL3F_Toshiba
Availability: OutOfStock
Rating: 5 (11 reviews)

1SS307E,L3F electronic component of Toshiba

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Datasheet

Diodes - General Purpose, Power, Switching Switching diode SNG Low leak current

Manufacturer: Toshiba

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

8000: USD 0.0388 ea
Line Total: USD 310.4

0 - Global Stock

MOQ: 8000 Multiples: 8000
Pack Size: 8000

More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 - Global Stock Ships to you between Fri. 03 May to Thu. 09 May MOQ : 8000 Multiples : 8000 1SS307E,L3F Toshiba	8000 : USD 0.0388 16000 : USD 0.0324 24000 : USD 0.0292 56000 : USD 0.0259 200000 : USD 0.0236

0 - Global Stock Ships to you between Fri. 03 May to Thu. 09 May MOQ : 1 Multiples : 1 1SS307E,L3F Toshiba	1 : USD 0.2423 10 : USD 0.2128 100 : USD 0.1157 500 : USD 0.0713 1000 : USD 0.0486 2000 : USD 0.0413

0 - Global Stock Ships to you between Fri. 03 May to Thu. 09 May MOQ : 1 Multiples : 1 1SS307E,L3F Toshiba	1 : USD 0.2423 10 : USD 0.2128 100 : USD 0.1157 500 : USD 0.0713 1000 : USD 0.0486 2000 : USD 0.0413

0 - Global Stock Ships to you between Thu. 09 May to Mon. 13 May MOQ : 1 Multiples : 1 1SS307E,L3F Toshiba	1 : USD 0.567 10 : USD 0.5076 100 : USD 0.1159 500 : USD 0.068 1000 : USD 0.0399 2500 : USD 0.0378

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Additional Infomation About Product

1SS294 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS294 Unit: mm Low Voltage High Speed Switching AEC-Q101 Qualified (Note1) Low forward voltage : V = 0.54V (typ.) F (3) Low reverse surrent : I = 5A (max) R Small package : SC59 Note1: For detail information, please contact to our sales. Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage V 45 V RM Reverse voltage V 40 V R Maximum (peak) forward current I 300 mA FM Average forward current I 100 mA O JEDEC TO236MOD Power dissipation P 150 mW JEITA SC59 TOSHIBA 2-3F1S Junction temperature T 125 C j Weight: 12 mg (typ.) Storage temperature range T 55 to 125 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25C) Characteristic Symbol Test Condition Min Typ. Max Unit V I = 1mA 0.28 F (1) F Forward voltage V I = 10mA 0.36 V F (2) F V I = 100mA 0.54 0.60 F (3) F Reverse current I V = 40V 5 A R R Total capacitance C V = 0 V, f = 1MHz 18 25 pF T R Marking Start of commercial production 1986-03 1 2017-10-19 1SS294 2 2017-10-19

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

Toshiba may also be referenced as

Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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