Product Information

1SS383(TE85L,F)

Name: 1SS383(TE85L,F)
Brand: Toshiba
SKU: 1SS383TE85LF_Toshiba
Availability: OutOfStock
Rating: 5 (11 reviews)

1SS383(TE85L,F) electronic component of Toshiba

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Datasheet

Toshiba Schottky Diodes & Rectifiers 0.1A 40V Schottky Small Sig Diode

Manufacturer: Toshiba

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 0.9242 ea
Line Total: USD 0.92

0 - Global Stock

MOQ: 1 Multiples: 1
Pack Size: 1

More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 - WHS 1 Ships to you between Wed. 29 May to Fri. 31 May MOQ : 1 Multiples : 1 1SS383(TE85L,F) Toshiba	1 : USD 0.9242 10 : USD 0.6491 100 : USD 0.1113 1000 : USD 0.0812 3000 : USD 0.0673

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Additional Infomation About Product

1SS383 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS383 Low Voltage High Speed Switching Unit: mm Small package Composed of 2 independent diodes. Low forward voltage: V = 0.54V (typ.) F (3) Low reverse current: I = 5 A (max) R Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Maximum (peak) reverse Voltage V 45 V RM Reverse voltage V 40 V R Maximum (peak) forward current I 300 * mA FM Average forward current I 100 * mA O Surge current (10ms) I 1 * A FSM Power dissipation P 100 * mW Junction temperature T 125 C j Storage temperature range T 55 to 125 C stg JEDEC JEITA Operating temperature range T 40 to 100 C opr TOSHIBA 1-2U1A Note: Using continuously under heavy loads (e.g. the application of high Weight: 0.006g (typ.) temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). *: Unit rating. Total rating = unit rating 1.5 Electrical Characteristics (Ta = 25C) Characteristic Symbol Test Condition Min Typ. Max Unit V I = 1mA 0.28 V F (1) F Forward voltage V I = 10mA 0.36 V F (2) F V I = 100mA 0.54 0.60 V F (3) F Reverse current I V = 40V 5 A R R Total capacitance C V = 0, f = 1MH 18 25 pF T R z Pin Assignment (Top View) Marking Start of commercial production 1994-09 1 2015-01-15 1SS383 1.4 Ambient temperature Ta (C) 2 2015-01-15 Power Dissipation P (mW)

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

Toshiba may also be referenced as

Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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