Product Information

1SS423(TE85L,F)

1SS423(TE85L,F) electronic component of Toshiba

Datasheet
Schottky Diodes & Rectifiers Vr=40V Io=0.1A 3Pin
Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.4083 ea
Line Total: USD 0.41

4623 - Global Stock
Ships to you between
Mon. 03 Jun to Wed. 05 Jun
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
4623 - WHS 1


Ships to you between Mon. 03 Jun to Wed. 05 Jun

MOQ : 1
Multiples : 1
1 : USD 0.4083
10 : USD 0.2909
100 : USD 0.1323
1000 : USD 0.1069
3000 : USD 0.0931
9000 : USD 0.0851
24000 : USD 0.084
45000 : USD 0.077
99000 : USD 0.0759

4718 - WHS 2


Ships to you between Tue. 28 May to Mon. 03 Jun

MOQ : 311
Multiples : 1
311 : USD 0.3281
500 : USD 0.3163
1000 : USD 0.3059
2500 : USD 0.2969

51924 - WHS 3


Ships to you between Tue. 28 May to Mon. 03 Jun

MOQ : 226
Multiples : 1
226 : USD 0.1804
500 : USD 0.1613
1000 : USD 0.1551
2000 : USD 0.1539
3000 : USD 0.1496
6000 : USD 0.1434
12000 : USD 0.1379

438 - WHS 4


Ships to you between Tue. 28 May to Mon. 03 Jun

MOQ : 173
Multiples : 1
173 : USD 0.2357
200 : USD 0.234

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Operating Temperature Range
Brand
Forward Continuous Current
Max Surge Current
Forward Voltage Drop
Maximum Diode Capacitance
Maximum Power Dissipation
Maximum Reverse Leakage Current
Peak Reverse Voltage
Factory Pack Quantity :
Height
Length
Termination Style
Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif

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Additional Infomation About Product

1SS423 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS423 Ultra-High-Speed Switching Applications Unit: mm Small package Low forward voltage: V = 0.56 V (typ.) F (3) Low reverse current: I = 5 A (max) R Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage V 45 V RM Reverse voltage V 40 V R 1.ANODE1 Maximum (peak) forward current I 200* mA FM 2.CATHODE2 Average forward current I 100* mA O 3.CATHODE1 Surge current (10 ms) I 1* A ANODE2 FSM Power dissipation P 100* mW Junction temperature T 125 C j JEDEC Storage temperature range T 55 to 125 C stg JEITA TOSHIBA 1-2S1C Operating temperature range T 40 to 100 C opr Weight: 0.0024 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). *: This is the absolute maximum rating for a single diode. Where two diodes are used, the absolute maximum rating per diode is 75% that for the single diode. Electrical Characteristics (Ta = 25C) Characteristic Symbol Test Condition Min Typ. Max Unit V I = 1 mA 0.28 F (1) F Forward voltage V I = 10 mA 0.36 F (2) F V V I = 100 mA 0.56 0.62 F (3) F Reverse current I V = 40 V 5 R R A Total capacitance C V = 0, f = 1 MHz 15 T R pF (between cathode and anode) Marking W9 Start of commercial production 2004-07 1 2014-03-01 1SS423 IF - VF IR VR 100u 100 100 Ta=100C 10u 10 75 50 1u1 10 Ta = 100C 25 100n 0 25 -25 0 10n 0 1 1n 0 -25 0 100p 0.1 0 10p 0 0.2 0.4 0.6 0.8 010 20 30 40 REVERSE VOLTAGE VR (V) FORWORD VOLTAGE VF (V) CT - VR 100 Ta = 25C f = 1MHz 10 1 0.1 0 10203040 REVERSE VOLTAGE VR (V) 2 2014-03-01 FORWARD CURRENT IF (mA) TOTAL CAPACITANCE CT (pF) REVERSE CURRENT IR (A)

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

Toshiba may also be referenced as

Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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