Product Information

2SK3799

2SK3799 electronic component of Toshiba

Datasheet
MOSFET, N, 900V, TO-220SIS

Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 2.6701 ea
Line Total: USD 2.6701

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - Global Stock


Ships to you between Thu. 04 Apr to Wed. 10 Apr

MOQ : 1
Multiples : 1

Stock Image

2SK3799
Toshiba

1 : USD 4.0186
10 : USD 3.2162
100 : USD 2.5798
500 : USD 2.2408
1000 : USD 1.9184

     
Manufacturer
Product Category
Transistor Polarity
Brand
Continuous Drain Current Id
Drain Source Voltage Vds
On Resistance Rdson
Rdson Test Voltage Vgs
Threshold Voltage Vgs
Power Dissipation Pd
Transistor Case Style
No. Of Pins
Operating Temperature Max
Svhc
Current Id Max
Termination Type
Voltage Vds Typ
Voltage Vgs Max
Voltage Vgs Rds On Measurement
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2SK3799 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOSIV) 2SK3799 Switching Regulator Applications Unit: mm Low drain-source ON resistance : R = 1.0 (typ.) DS (ON) High forward transfer admittance : Y = 6.0 S (typ.) fs Low leakage current : I = 100A (max) (V = 720 V) DSS DS Enhancement model : V = 2.0 to 4.0 V (V = 10 V, I = 1 mA) th DS D Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Drain-source voltage V 900 V DSS Drain-gate voltage (R = 20 k ) V 900 V GS DGR Gate-source voltage V 30 V GSS DC (Note 1) I 8 A D Drain current Pulse (Note 1) I 24 A DP 1. Gate Drain power dissipation P 50 W D 2. Drain 3. Source Single pulse avalanche energy E 1080 mJ AS (Note 2) JEDEC Avalanche current I 8 A AR Repetitive avalanche energy (Note 3) E 5 mJ JEITA SC-67 AR Channel temperature T 150 C ch TOSHIBA 2-10U1B Storage temperature range T 55~150 C stg Weight: 1.7 g (typ.) 2 Thermal Characteristics Characteristic Symbol Max Unit Thermal resistance, channel to case R 2.5 C / W th (ch c) Thermal resistance, channel to 1 R 62.5 C / W th (ch a) ambient Note 1: Ensure that the channel temperature does not exceed 150C during use of the device. Note 2: V = 90 V, T = 25C (initial), L = 30.9 mH, R = 25 , I = 8 A DD ch G AR 3 Note 3: Repetitive rating: pulse width limited by maximum channel temperature. This transistor is an electrostatic-sensitive device. Handle with care. 1 2005-01-24 2SK3799 Electrical Characteristics (Ta = 25C) Characteristic Symbol Test Condition Min Typ. Max Unit Gate leakage current I V = 30 V, V = 0 V 10 A GSS GS DS Drain-source breakdown voltage V I = 10 A, V = 0 V 30 V (BR) GSS G GS Drain cut-off current I V = 720 V, V = 0 V 100 A DSS DS GS Drain-source breakdown voltage V I = 10 mA, V = 0 V 450 V (BR) DSS D GS Gate threshold voltage V V = 10 V, I = 1 mA 2.0 4.0 V th DS D Drain-source ON resistance R V = 10 V, I = 4 A 1.0 1.3 DS (ON) GS D Forward transfer admittance Y V = 15 V, I = 4 A 3.5 6.0 S fs DS D Input capacitance C 2200 iss Reverse transfer capacitance C V = 25 V, V = 0 V, f = 1 MHz 45 pF rss DS GS Output capacitance C 190 oss Rise time t 25 r I = 4 A D 10 V Output V GS 0 V Turn-on time t 65 on Switching time ns Fall time t 20 f V 400 V DD Turn-off time t 120 off Duty 1%, t = 10 s w Total gate charge (Gate-source Q 60 g plus gate-drain) V 400 V, V = 10 V, I = 8 A nC DD GS D Gate-source charge Q 34 gs Gate-drain (miller) charge Q 26 gd Source-Drain Ratings and Characteristics (Ta = 25C) Characteristic Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current I 8 A DR (Note 1) Pulse drain reverse current I 24 A DRP (Note 1) Forward voltage (diode) V I = 8 A, V = 0 V 1.7 V DSF DR GS Reverse recovery time t 1700 ns rr I = 8 A, V = 0 V DR GS dl / dt = 100 A / S DR Reverse recovery charge Qrr 23 C Marking K3799 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2005-01-24 4.7 R = 100 L

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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