2SK3799(Q,M) Toshiba

2SK3799(Q,M) electronic component of Toshiba
2SK3799(Q,M) Toshiba
2SK3799(Q,M) MOSFETs
2SK3799(Q,M)  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of 2SK3799(Q,M) MOSFETs across the USA, India, Europe, Australia, and various other global locations. 2SK3799(Q,M) MOSFETs are a product manufactured by Toshiba. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. 2SK3799(Q,M)
Manufacturer: Toshiba
Category: MOSFETs
Description: Transistor: N-MOSFET; unipolar; 900V; 8A; 50W; TO220FP
Datasheet: 2SK3799(Q,M) Datasheet (PDF)
Price (USD)
1: USD 3.724 ea
Line Total: USD 3.72 
Availability : 98
  
Ship by Wed. 19 Nov to Fri. 21 Nov
QtyUnit Price
1$ 3.724
3$ 3.332
8$ 2.562
21$ 2.422

Availability 98
Ship by Wed. 19 Nov to Fri. 21 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 3.724
3$ 3.332
8$ 2.562
21$ 2.422

   
Manufacturer
Product Category
Features Of Semiconductor Devices
Kind Of Package
Mounting
Case
Polarisation
Type Of Transistor
Drain-Source Voltage
Drain Current
On-State Resistance
Gate-Source Voltage
Gate Charge
Power Dissipation
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2SK3799(Q,M) from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SK3799(Q,M) and other electronic components in the MOSFETs category and beyond.

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1. The 2SK3799(Q,M) is a power MOSFET manufactured by Toshiba Semiconductor. It is an enhancement-mode type MOSFET with an N-channel structure. 2. It has a drain-to-source voltage (VDS) rating of 60V, and a drain current of 44A with a power dissipation (PD) rating of 100W. The 2SK3799(Q,M) MOSFET is qualified to meet higher drain-source breakdown voltages while offering an extremely low on-state resistance (RDS(on)). This allows the device to handle more power at higher load currents.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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