Product Information

2SK3799(Q,M)

2SK3799(Q,M) electronic component of Toshiba

Datasheet
Transistor: N-MOSFET; unipolar; 900V; 8A; 50W; TO220FP

Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 3.432 ea
Line Total: USD 3.432

48 - Global Stock
Ships to you between
Thu. 04 Apr to Wed. 10 Apr
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
47 - Global Stock


Ships to you between Thu. 04 Apr to Wed. 10 Apr

MOQ : 1
Multiples : 1

Stock Image

2SK3799(Q,M)
Toshiba

1 : USD 3.419
3 : USD 3.068
8 : USD 2.236
21 : USD 2.106

     
Manufacturer
Product Category
Features Of Semiconductor Devices
Kind Of Package
Mounting
Case
Polarisation
Type Of Transistor
Drain-Source Voltage
Drain Current
On-State Resistance
Gate-Source Voltage
Gate Charge
Power Dissipation
LoadingGif

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1. The 2SK3799(Q,M) is a power MOSFET manufactured by Toshiba Semiconductor. It is an enhancement-mode type MOSFET with an N-channel structure. 2. It has a drain-to-source voltage (VDS) rating of 60V, and a drain current of 44A with a power dissipation (PD) rating of 100W. The 2SK3799(Q,M) MOSFET is qualified to meet higher drain-source breakdown voltages while offering an extremely low on-state resistance (RDS(on)). This allows the device to handle more power at higher load currents.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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