Product Information

6N136

6N136 electronic component of Toshiba

Datasheet
Application scope: Communication interface, PLC, Measurement instrumentation, BVS=2500Vrms(min)@t=60s, UL approved

Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

50: USD 1.4742 ea
Line Total: USD 73.71

2205 - Global Stock
Ships to you between
Tue. 21 May to Mon. 27 May
MOQ: 50  Multiples: 50
Pack Size: 50
Availability Price Quantity
2328 - WHS 1


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 50
Multiples : 50

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6N136
Toshiba

50 : USD 1.4742

     
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6N135,6N136 TOSHIBA Photocoupler GaA As Ired & Photo IC 6N135, 6N136 Digital Logic Isolation Unit: mm Line Receiver Power Supply Control Switching Power Supply Transistor Inverter The TOSHIBA 6N135 and 6N136 consists of a high emitting diode and a one chip photo diodetransistor. Each unit is 8lead DIP package. Isolation voltage: 2500 V (min) rms High speed: t , t = 0.5 s (typ.) (R = 1.9k ) pHL pLH L TTL compatible If base pin is open, output signal will be noisy by environmental TOSHIBA 1110C4 condition. For this base, TLP550 is suitable Weight: 0.54 g (typ.) UL recognized: UL1577, file no. E67349 Pin Configurations 1 8 8 7 2 3 6 4 5 1 : N.C. 2 : ANODE 3 : CATHODE 4 : N.C. 5 : EMITTER 6 : COLLECTOR 7 : BASE, ANODE 8 : CATHODE I CC 8 V CC II FF I B 7 V B 2 I V O F 6 V O 3 5 GND Start of commercial production 1982/10 1 2014-09-22 6N135,6N136 Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Forward current (Note 1) I 25 mA F Pulse forward current (Note 2) I 50 mA FP Total pulse forward current (Note 3) I 1 A FPT Reverse voltage V 5 V R Diode power dissipation (Note 4) P 45 mW D Output current I 8 mA O Peak output current I 16 mA OP Emitterbase reverse voltage (pin 57) V 5 V EB Supply voltage V 0.5 to 15 V CC Output voltage V 0.5 to 15 V O Base current (pin 7) I 5 mA B Output power dissipation (Note 5) P 100 mW o Operating temperature range T 55 to 100 C opr Storage temperature range T 55 to 125 C stg Lead solder temperature (10s) (Note 6) T 260 C sol Isolation voltage (Note 7) BV 2500 V S rms Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc.). (Note 1) Derate 0.8 mA above 70C. (Note 2) 50% duty cycle, 1ms pulse width. Derate 1.6 mA / C above 70C. (Note 3) Pulse width 1 s, 300pps. (Note 4) Derate 0.9 mW / C above 70C. (Note 5) Derate 2 mW / C above 70C. (Note 6) Soldering portion of lead: Up to 2mm from the body of the device. (Note 7) R.H. 60%, AC, 1minute 2 2014-09-22 Detector LED

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