Product Information

6N138

6N138 electronic component of Toshiba

Datasheet
OPTOCOUPLER, DARLINGTON O/P

Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.9734 ea
Line Total: USD 0.97

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 1
Multiples : 1

Stock Image

6N138
Toshiba

1 : USD 0.9734
10 : USD 0.8118
100 : USD 0.7146

     
Manufacturer
Product Category
Brand
No. Of Channels
Optocoupler Case Style
No. Of Pins
Forward Current If Max
Isolation Voltage
Ctr Min
Collector Emitter Voltage Vbrceo
Svhc
Approval Bodies
Cmr
Current Transfer Ratio Min
Current Transfer Ratio Typ
Input Current
Operating Temperature Max
Operating Temperature Min
Operating Temperature Range
Optocoupler Output Type
Output Voltage
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6N138,6N139 TOSHIBA Photocoupler GaAAs Ired & Photo IC 6N138, 6N139 Current Loop Driver Unit: mm Low Input Current Line Receiver CMOS Logic Interface The TOSHIBA 6N138 and 6N139 consists of a GaA As infrared emitting diode coupled with a split-Darlington output configuration. A high speed GaA As Ired manufactured with an unique LPE junction, has the virtue of fast rise and fall time at low drive current. Isolation voltage: 2500 Vrms (min) Current transfer ratio : 6N138 300% (min) (I =1.6mA) F : 6N139 400% (min) (I =0.5mA) F Switching time: 6N138 t = 10s (max) PHL t = 35s (max) PLH 6N139 t = 1s (max) PHL t = 7s (max) PLH UL recognized: UL1577, file no. E67349 TOSHIBA 1110C4 Pin Configuration (top view) Weight: 0.54 g (typ.) 1 : N.C. 1 8 2 : Anode 3 : Cathode 7 2 4 : N.C. 5 : G nd 6 : O utput 6 3 7 : O utput Base 8 : V CC 5 4 Schematic V CC 8 I F 2 I CC + I O 6 V F V O - 3 5 7 I B GND V B Start of commercial production 1988/02 1 2014-09-01 6N138,6N139 Absolute Maximum Ratings * ( ) (Ta = 0C to + 70C) Characteristic Symbol Rating Unit Forward current (Note 1) I 20 mA F (*1) Pulse forward current I 40 mA FP (*2) Total pulse forward current I 1 A FP Reverse voltage V 5 V R Diode power dissipation (Note 2) P 35 mW D Output current (Note 3) I 60 mA O Emitterbase reverse voltage V 0.5 V EB (*3) Supply voltage V 0.5 to 18 V CC (*3) Output voltage V 0.5 to 18 V O Output power dissipation (Note 4) P 100 mW O Operating temperature range T 0 to 70 C opr Storage temperature range T 55 to 125 C stg (*4) Lead solder temperature (10s) T 260 C sol 2500 V rms (**) Isolation voltage (1minute, R.H. 60%) BV S 3540 V dc Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc.). (*) JEDEC registered data (**) Not registered JEDEC (*1) 50% duty cycle, 1ms pulse width (*2) Pulse width 1 s, 300pps (*3) 6N138 0.5 to 7V (*4) 1.6mm below seating plane 2 2014-09-01 Detector LED

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