7UL1G86FU CMOS Digital Integrated Circuits Silicon Monolithic 7UL1G86FU7UL1G86FU7UL1G86FU7UL1G86FU 1. 1. Functional DescriptionFunctional Description 1. 1. Functional DescriptionFunctional Description 2-Input Exclusive-OR Gate 2. 2. 2. 2. FeaturesFeaturesFeaturesFeatures (1) High output current: 8.0 mA (min) at V = 3.0 V CC (2) Super high speed operation: t = 2.5 ns (typ.) at V = 3.3 V, C = 15 pF pd CC L (3) Operation voltage range: V = 0.9 to 3.6 V CC (4) 3.6 V tolerant inputs (5) 3.6 V power down protection output 3. 3. PackagingPackaging 3. 3. PackagingPackaging USV 4. 4. 4. 4. Marking and Pin AssignmentMarking and Pin AssignmentMarking and Pin AssignmentMarking and Pin Assignment Marking Pin Assignment (Top view) MarkingMarkingMarking Pin Assignment (Top view)Pin Assignment (Top view)Pin Assignment (Top view) Start of commercial production 2018-10 2018 2018-05-22 1 Toshiba Electronic Devices & Storage Corporation Rev.1.07UL1G86FU 5. 5. 5. 5. IEC Logic SymbolIEC Logic SymbolIEC Logic SymbolIEC Logic Symbol 6. 6. 6. 6. Truth TableTruth TableTruth TableTruth Table A B Y L L L L H H H L H H H L 7. 7. Absolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 = 25 )) 7. 7. Absolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 = 25 )) aa aa Characteristics Symbol Note Rating Unit Supply voltage V -0.5 to 4.6 V CC Input voltage V -0.5 to 4.6 V IN DC output voltage V (Note 1) -0.5 to 4.6 V OUT (Note 2) -0.5 to V + 0.5 CC Input diode current I -20 mA IK Output diode current I (Note 3) -20 mA OK DC output current I 25 mA OUT V /ground current I 50 mA CC CC Power dissipation P 200 mW D Storage temperature T -65 to 150 stg Note: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even destruction. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: V = 0 V CC Note 2: High (H) or Low (L) state. I absolute maximum rating must be observed. OUT Note 3: V < GND OUT 2018 2018-05-22 2 Toshiba Electronic Devices & Storage Corporation Rev.1.0