Product Information

CRF03(TE85L,Q,M)

CRF03(TE85L,Q,M) electronic component of Toshiba

Datasheet
Rectifiers Diode S-FRD 600V, 0.7A

Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.0919 ea
Line Total: USD 0.09

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Mon. 27 May to Fri. 31 May

MOQ : 3000
Multiples : 3000
3000 : USD 0.0941

0 - WHS 2


Ships to you between
Mon. 03 Jun to Thu. 06 Jun

MOQ : 1
Multiples : 1
1 : USD 0.0919
10 : USD 0.0562
30 : USD 0.0339
100 : USD 0.0293
500 : USD 0.0272
1000 : USD 0.0252

0 - WHS 3


Ships to you between Fri. 31 May to Tue. 04 Jun

MOQ : 1
Multiples : 1
1 : USD 1.3089
10 : USD 0.5436
100 : USD 0.2458
500 : USD 0.1688
1000 : USD 0.1293
3000 : USD 0.109

0 - WHS 4


Ships to you between Mon. 27 May to Fri. 31 May

MOQ : 3000
Multiples : 3000
3000 : USD 0.0952
60000 : USD 0.0896

     
Manufacturer
Product Category
Package / Case
Vr - Reverse Voltage
If - Forward Current
Brand
Rohs
Voltage - Forward Vf Max @ If
LoadingGif

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CRF03 TOSHIBA Fast Recovery Diode Silicon Diffused Type CRF03 : mm Unit Switching Mode Power Supply Applications Repetitive peak reverse voltage : V = 600 V RRM Average forward current : I = 0.7 A F (AV) Peak forward voltage : V = 2.0 V (max.) FM Very fast reverse-recovery time : t = 100 ns (max.) rr Small, thin package suitable for high-density board assembly TM Toshiba Nickname: S-FLAT Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Repetitive peak reverse voltage V 600 V RRM Average forward current I 0.7 (Note 1) A F(AV) Non-repetitive peak forward surge current I 10 (50 Hz) A FSM JEDEC Junction temperature T 40 to 150 C j JEITA Storage temperature range T 40 to 150 C stg TOSHIBA 3-2A1S Note 1: Ta = 76C Device mounted on a ceramic board Board size : 50 mm 50 mm, Weight: 0.013 g (typ.) Soldering land size : 2 mm 2 mm Board thickness : 0.64 mm Rectangular waveform ( = 180) Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. Max Unit Peak forward voltage V I = 0.7 A (Pulse test) 1.5 2.0 V FM FM Repetitive peak reverse current I V = 600 V (Pulse test) 50 A RRM RRM Reverse recovery time t I = 1 A, di/dt = 30 A/s 100 ns rr F Device mounted on a ceramic board board size : 50 m 5m0 mm 70 soldering land size : 2 mm 2 mm board thickness : 0.64 mm Device mounted on a glass-epoxy board Thermal resistance board size : 50 m 5m0 mm R 140 C/W th (j-a) (junction to ambient) soldering land size : 6 mm 6 mm board thickness : 1.6 mm Device mounted on a glass-epoxy board board size : 50 m 5m0 mm 240 soldering land size : 1.2 mm 1.2 mm board thickness : 1.6 mm Thermal resistance (junction to lead) R 20 C/W th (j-) Start of commercial production 2003-12 2018-07-13 1 CRF03 Marking Abbreviation Code Part No. F3 CRF03 Land pattern dimensions for reference only Unit: mm 1.2 1.2 2.8 Handling Precaution 1) The absolute maximum ratings denote the absolute maximum ratings, which are rated values that must not be exceeded during operation, even for an instant. The following are the general derating methods that we recommend for when designing a circuit incorporating this device. V : We recommend that the worst case voltage, including surge voltage, be no greater than 80% of the RRM absolute maximum rating of V for a DC circuit and no greater than 50% of that of V for an AC RRM RRM circuit. V has a temperature coefficient of 0.1%/. Take this temperature accouncto efficient RRM into when designing a device for operation at low temperatures. I : We recommend that the worst-case current be no greater than 80% of the absolute maximum rating of F(AV) I and that the worst-case junction temperature, T, be kept below 120. When using this device, F(AV) j allow margins, referring to the T - I curve. a(max) F(AV) I : This rating specifies peak non-repetitive forward surge current. This only applies to an abnormal FSM operation, which seldom occurs during the lifespan of a device. T : Derate device parameters in proportion to this rating in order to ensure high reliability. j We recommend that the junction temperature (T ) of a device be kept below 120 . j 2) Thermal resistance (junction-to-ambient) varies with the mounting conditions of a device on a circuit board. An appropriate thermal resistance value should be used, considering the heat sink, circuit board design and soldering land size. 3) For other design considerations, see the Toshiba website. 2018-07-13 2

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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