CRS03(TE85L,Q,M) Toshiba

CRS03 TOSHIBA Schottky Barrier Diode CRS03 Radio-Frequency Rectification in Switching Regulators Unit: mm Reverse-Current Protection in Mobile Devices Repetitive peak reverse voltage : V = 30 V RRM Average forward current : I = 1.0 A F (AV) Peak forward voltage : V = 0.45 V (max) IFM = 0.7 A FM Small, thin package suitable for high-density board assembly TM Toshiba Nickname: S-FLAT Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Repetitive peak reverse voltage V 30 V RRM Average forward current I 1.0 (Note 1) A F (AV) Non-repetitive peak forward surge current I 20 (50 Hz) A FSM Junction temperature T 40 to 150 C j JEDEC Storage temperature T 40 to 150 C stg JEITA Note 1: Ta = 61C Device mounted on a glass-epoxy board TOSHIBA 3-2A1S Board size : 50 mm 50 mm Soldering land size : 6 mm 6 mm Weight: 0.013 g (typ.) Board thickness : 1.6 mm Rectangular waveform : = 180, VR = 15 V Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. Max Unit V I = 0.1 A (pulse test) 0.33 FM (1) FM Peak forward voltage V I = 0.7 A (pulse test) 0.425 0.45 V FM (2) FM V I = 1.0 A (pulse test) 0.45 FM (3) FM I V = 5 V (pulse test) 0.5 RRM (1) RRM Repetitive peak reverse current A I V = 30 V (pulse test) 100 RRM (2) RRM Junction capacitance C V = 10 V, f = 1.0 MHz 40 pF j R Device mounted on a ceramic board board size 50 mm 50 mm 70 soldering land size 2 mm 2 mm Thermal resistance board thickness 0.64 mm R C/W th (j-a) (junction to ambient) Device mounted on a glass-epoxy board board size 50 mm 50 mm 140 soldering land size 6 mm 6 mm board thickness 1.6 mm Thermal resistance (junction to lead) R 20 C/W th (j-) Start of commercial production 1998-06 1 2018-09-05 CRS03 Marking Abbreviation Code Part No. S3 CRS03 Land pattern dimensions for reference only Unit: mm 1.2 1.2 2.8 Handling Precaution 1) Schottky barrier diodes have reverse current characteristics compared to other diodes. There is a possibility SBD may cause thermal runaway when it is used under high temperature or high voltage. Please take forward and reverse loss into consideration during design. 2) The absolute maximum ratings denote the absolute maximum ratings, which are rated values and must not be exceeded during operation, even for an instant. The following are the general derating methods that we recommend when you design a circuit with a device. VRRM: Use this rating with reference to the above. VRRM has a temperature coefficient of 0.1%/C. Take this temperature coefficient into account designing a device at low temperature. IF (AV): We recommend that the worst case current be no greater than 80% of the absolute maximum rating of IF(AV) and Tj be below 120C. When using this device, take the margin into consideration by using an allowable Tamax-IF(AV) curve. IFSM: This rating specifies the non-repetitive peak current. This is only applied for an abnormal operation, which seldom occurs during the lifespan of the device. Tj: Derate this rating when using a device in order to ensure high reliability. We recommend that the device be used at a Tj of below 120C. 3) Thermal resistance between junction and ambient fluctuates depending on the devices mounting condition. When using a device, design a circuit board and a soldering land size to match the appropriate thermal resistance value. 4) For other design considerations, see the Toshiba website. 2 2018-09-05