Product Information

CRS09 (TE85L,Q)

CRS09 (TE85L,Q) electronic component of Toshiba

Datasheet
Diode Schottky 30V 1.5A 2-Pin S-FLAT T/R

Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

310: USD 0.1171 ea
Line Total: USD 36.3

0 - Global Stock
MOQ: 310  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Thu. 23 May to Wed. 29 May

MOQ : 310
Multiples : 1
310 : USD 0.1171

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
If - Forward Current
Configuration
Vf - Forward Voltage
Max Surge Current
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Product
Technology
Brand
Factory Pack Quantity :
Vrrm - Repetitive Reverse Voltage
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CRS09 TOSHIBA Schottky Barrier Rectifier Schottky Barrier Type CRS09 Switching Mode Power Supply Applications Unit: mm Portable Equipment Battery Applications Forward voltage: V = 0.46 V (max) FM Average forward current: I = 1.5 A F (AV) Repetitive peak reverse voltage: V = 30 V RRM Suitable for compact assembly due to small surface-mount package TM SFLAT (Toshiba package name) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Repetitive peak reverse voltage V 30 V RRM Average forward current I 1.5 (Note 1) A F (AV) Peak one cycle surge forward current I 30 (50 Hz) A FSM (non-repetitive) Junction temperature T 40~150 C j Storage temperature T 40~150 C stg JEDEC JEITA Note 1: Ta = 84C Device mounted on a ceramic board TOSHIBA 3-2A1A (board size: 50 mm 50 mm, land size: 2 mm 2 mm) Weight: 0.013 g (typ.) Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit V I = 0.1 A 0.35 FM (1) FM Peak forward voltage V V I = 1.0 A 0.415 FM (2) FM V I = 1.5 A 0.43 0.46 FM (3) FM I V = 5 V 0.8 RRM (1) RRM Repetitive peak reverse current A I V = 30 V 10 50 RRM (2) RRM Junction capacitance C V = 10 V, f = 1.0 MHz 90 pF j R Device mounted on a ceramic board 70 (soldering land: 2 mm 2 mm) Thermal resistance (junction to ambient) R C/W th (j-a) Device mounted on a glass-epoxy board 140 (soldering land: 6 mm 6 mm) Thermal resistance (junction to lead) R 20 C/W th (j-) Start of commercial production 2000-04 1 2013-11-01 CRS09 Marking Abbreviation Code Part No. S9 CRS09 Standard Soldering Pad Unit: mm 1.2 1.2 2.8 Handling Precaution Schottky barrier diodes have reverse current characteristics compared to other diodes. There is a possibility SBD may cause thermal runaway when it is used under high temperature or high voltage. Please take forward and reverse loss into consideration during design. The absolute maximum ratings denote the absolute maximum ratings, which are rated values and must not be exceeded during operation, even for an instant. The following are the general derating methods that we recommend when you design a circuit with a device. V : Use this rating with reference to the above. V has a temperature coefficient of 0.1%/C. Take RRM RRM this temperature coefficient into account designing a device at low temperature. I : We recommend that the worst case current be no greater than 80% of the absolute maximum rating F(AV) of I and T be below 120C. When using this device, take the margin into consideration by F(AV) j using an allowable Tamax-I curve. F(AV) I : This rating specifies the non-repetitive peak current. This is only applied for an abnormal operation, FSM which seldom occurs during the lifespan of the device. T : Derate this rating when using a device in order to ensure high reliability. We recommend that the j device be used at a T of below 120C. j Thermal resistance between junction and ambient fluctuates depending on the devices mounting condition. When using a device, design a circuit board and a soldering land size to match the appropriate thermal resistance value. Please refer to the Rectifiers databook for further information. 2 2013-11-01

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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