Product Information

CRS10I30A(TE85L,QM

CRS10I30A(TE85L,QM electronic component of Toshiba

Datasheet
Toshiba Schottky Diodes & Rectifiers 30V Vrrm 1.0A IF 50Hz 0.7A IFM
Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.3713 ea
Line Total: USD 0.37

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

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Availability Price Quantity
0 - WHS 1


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1
1 : USD 0.3713
10 : USD 0.2622
100 : USD 0.1186
1000 : USD 0.0949
3000 : USD 0.089
9000 : USD 0.0759
24000 : USD 0.0747
45000 : USD 0.07
99000 : USD 0.0664

0 - WHS 2


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 209
Multiples : 1
209 : USD 0.1933

0 - WHS 3


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 209
Multiples : 1
209 : USD 0.1874

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
trr - Reverse Recovery time
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Additional Infomation About Product

CRS10I30A TOSHIBA Schottky Barrier Rectifier Schottky Barrier Type CRS10I30A Secondary Rectification in Switching Regulators Unit: mm Reverse-Current Protection in Mobile Devices Forward voltage: V = 0.39 V (max) I = 0.7 A FM FM Forward current (AV): I = 1.0 A F (AV) Repetitive peak reverse voltage: V = 30 V RRM Suitable for high-density board assembly due to the use of a small TM surface-mount package, S-FLAT 0.9 0.1 0.16 Absolute Maximum Ratings (Ta = 25C) + 0.2 1.6 0.1 Characteristics Symbol Rating Unit Repetitive peak reverse voltage V 30 V RRM ANODE Forward current (AV) I 1.0 (Note 1) A CATHODE F (AV) Peak one-cycle surge current I 20 (50 Hz) A FSM Junction temperature T 150 C j JEDEC Storage temperature T -55 to 150 C stg JEITA Note: Using continuously under heavy loads (e.g. the application of high TOSHIBA 3-2A1A temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the Weight: 0.013 g (typ.) reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Ta = 51C: Device mounted on a glass-epoxy board Board size: 50 mm 50 mm Soldering size: 6 mm 6 mm Board thickness: 1.6 mm Rectangular waveform ( = 180), V = 15 V R Start of commercial production 2009-11 1 2013-11-01 0 ~ 0.1 2.6 0.1 3.5 0.2 0.98 0.1 0.65 0.2 0.65 0.2 CRS10I30A Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit V I = 0.1 A (pulse test) 0.27 FM (1) FM Peak forward voltage V V I = 0.7 A (pulse test) 0.35 0.39 FM (2) FM V I = 1.0 A (pulse test) 0.37 FM (3) FM I V = 5.0 V (pulse test) 10 RRM (1) RRM Repetitive peak reverse current A I V = 30 V (pulse test) 20 60 RRM (2) RRM Junction capacitance C V = 10 V, f = 1.0 MHz 50 pF j R Device mounted on a ceramic board board size: 50 mm 50 mm 70 soldering land: 2 mm 2 mm board thickness: 0.64 mm Thermal resistance (junction to ambient) R C/W th (j-a) Device mounted on a glass-epoxy board board size: 50 mm 50 mm 140 soldering land: 6 mm 6 mm board thickness: 1.6 mm Thermal resistance (junction to lead) R 20 C/W th (j-) Marking Part No.(or abbreviation code) Cathode dot Abbreviation Code Part No. Anode Cathode SF CRS10I30A SF Cathode mark and Lot code Land pattern dimensions for reference only Unit: mm 1.2 1.2 2.8 2 2013-11-01

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

Toshiba may also be referenced as

Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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