Product Information

CRY62(TE85L,Q,M)

CRY62(TE85L,Q,M) electronic component of Toshiba

Datasheet
Toshiba Zener Diodes 6.2V 0.7W S-FLAT

Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.4486 ea
Line Total: USD 1.45

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1
1 : USD 1.4486
10 : USD 0.6895
100 : USD 0.3744
500 : USD 0.2942
1000 : USD 0.2273
3000 : USD 0.2061
6000 : USD 0.1928
9000 : USD 0.1761
24000 : USD 0.1694

     
Manufacturer
Product Category
Vz - Zener Voltage
Voltage Tolerance
Pd - Power Dissipation
Zz - Zener Impedance
Maximum Operating Temperature
Configuration
Mounting Style
Packaging
Minimum Operating Temperature
Test Current
Series
Ir - Maximum Reverse Leakage Current
Hts Code
LoadingGif

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CRY62 to CRZ39 TOSHIBA Zener Diode Silicon Epitaxial Type CRY62 to CRZ39 Surge absorber Unit: mm Average power dissipation : P = 0.7 W Zener voltage : V = 6.2 to 39 V Z Suitable for compact assembly due to small surface-mount package TM SFLAT (Toshiba package name) Absolute Maximum Ratings C (Ta = 25 ) Characteristic Symbol Rating Unit Power dissipation P 0.7 W Junction temperature T 40 to 150 C j Storage temperature range T 40 to 150 C stg JEDEC Note: Using continuously under heavy loads (e.g. the application of high JEITA temperature/current/voltage and the significant change in TOSHIBA 3-2A1S temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. Weight: 0.013 g (typ.) operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Land Pattern Dimensions (reference only) Unit: mm 1.2 1.2 2.8 Start of commercial production 1999-09 1 2014-10-09 CRY62 to CRZ39 Electrical Characteristics ) (Ta = 25C Zener Forward Reverse Zener Voltage Temperature Impedance Voltage Current Coefficient of Zener Measure- Measure- Measure Measure- Product Voltage V r V I Z d F R ment ment -ment ment T No. () (V) (A) (V) Current Current Current Voltage (mV / C) I I I V Z Z F R (mA) (mA) (A) (V) Typ. Max Max Typ. Max Max Max Min CRY62 5.6 6.2 6.8 10 60 10 2 3 1.0 0.2 10 3.0 CRY68 6.2 6.8 7.4 10 60 10 3 4 1.0 0.2 10 3.0 CRY82 7.4 8.2 9.0 10 30 10 4 6 1.0 0.2 10 4.9 CRZ10 9.0 10.0 11.0 10 30 10 6 9 1.0 0.2 10 6.0 CRZ12 10.8 12.0 13.2 10 30 10 8 13 1.0 0.2 10 8.0 CRZ13 11.7 13.0 14.3 10 30 10 9 14 1.0 0.2 10 9.0 CRZ15 13.5 15.0 16.5 10 30 10 11 17 1.0 0.2 10 10.0 CRZ16 14.4 16.0 17.6 10 30 10 12 19 1.0 0.2 10 11.0 CRZ18 16.2 18.0 19.8 10 30 10 14 23 1.0 0.2 10 13.0 CRZ20 18.0 20.0 22.0 10 30 10 16 26 1.0 0.2 10 14.0 CRZ24 21.6 24.0 26.4 10 30 10 20 32 1.0 0.2 10 17.0 CRZ27 24.3 27.0 29.7 10 30 10 23 36 1.0 0.2 10 19.0 CRZ30 27.0 30.0 33.0 10 30 10 25 40 1.0 0.2 10 21.0 CRZ33 29.7 33.0 36.3 10 30 10 26 41 1.0 0.2 10 26.4 CRZ36 32.4 36.0 39.6 9 30 9 28 45 1.0 0.2 10 28.8 CRZ39 35.1 39.0 42.9 8 35 8 30 48 1.0 0.2 10 31.2 2 2014-10-09

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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