CUS05F30,H3F Toshiba

CUS05F30 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type CUS05F30 High-Speed Switching Application Unit: mm Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Reverse voltage V 30 V R Average forward current I 500 * mA O Surge current (10ms) I 5 A FSM Junction temperature T 125 C j Storage temperature range T 55 to 125 C stg *: Mounted on a glass-epoxy circuit board of 20 mm 20 mm, pad dimensions of 4 mm 4 mm. Note: Using continuously under heavy loads (e.g. the application of high USC temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the JEDEC reliability significantly even if the operating conditions (i.e. operating JEITA temperature/current/voltage, etc.) are within the absolute maximum TOSHIBA 1-1E1A ratings. Weight: 4.5 mg (typ.) Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25C) Test Characteristic Symbol Test Condition Min Typ. Max Unit Circuit V I = 10mA 0.23 F (1) F Forward voltage V I = 100mA 0.31 V F (2) F V I = 500mA 0.38 0.45 F (3) F Reverse current I V = 30V 5 50 R R A Total capacitance C V = 0 V, f = 1 MHz 120 pF T R Marking Equivalent Circuit (Top View) HP Start of commercial production 2010-12 2014-03-01 1CUS05F30 Handling Precaution Schottky barrier diodes have reverse current characteristic compared to the other diodes. There is a possibility SBD may cause thermal runaway when it is used under high temperature or high voltage. Please take forward and reverse loss into consideration during design. 2014-03-01 2