Product Information

CUS05F30,H3F

CUS05F30,H3F electronic component of Toshiba

Datasheet
Schottky Diodes & Rectifiers 20V Vrrm 500mA IO 5A IFSM .45Vf Max
Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3000: USD 0.0384 ea
Line Total: USD 115.2

8730 - Global Stock
Ships to you between
Thu. 23 May to Wed. 29 May
MOQ: 3000  Multiples: 3000
Pack Size: 3000

 More Buying Options & Price Grid(s)

Availability Price Quantity
8730 - WHS 1


Ships to you between Thu. 23 May to Wed. 29 May

MOQ : 3000
Multiples : 3000

Stock Image

CUS05F30,H3F
Toshiba

3000 : USD 0.0384
6000 : USD 0.0378
12000 : USD 0.0371
18000 : USD 0.0365
24000 : USD 0.0358

7516 - WHS 2


Ships to you between Wed. 29 May to Fri. 31 May

MOQ : 1
Multiples : 1

Stock Image

CUS05F30,H3F
Toshiba

1 : USD 0.3264
10 : USD 0.2205
100 : USD 0.091
1000 : USD 0.0636
3000 : USD 0.0498
9000 : USD 0.0436
24000 : USD 0.0424
45000 : USD 0.0398
99000 : USD 0.0374

Read More Specifications

     
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Additional Infomation About Product

CUS05F30 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type CUS05F30 High-Speed Switching Application Unit: mm Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Reverse voltage V 30 V R Average forward current I 500 * mA O Surge current (10ms) I 5 A FSM Junction temperature T 125 C j Storage temperature range T 55 to 125 C stg *: Mounted on a glass-epoxy circuit board of 20 mm 20 mm, pad dimensions of 4 mm 4 mm. Note: Using continuously under heavy loads (e.g. the application of high USC temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the JEDEC reliability significantly even if the operating conditions (i.e. operating JEITA temperature/current/voltage, etc.) are within the absolute maximum TOSHIBA 1-1E1A ratings. Weight: 4.5 mg (typ.) Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25C) Test Characteristic Symbol Test Condition Min Typ. Max Unit Circuit V I = 10mA 0.23 F (1) F Forward voltage V I = 100mA 0.31 V F (2) F V I = 500mA 0.38 0.45 F (3) F Reverse current I V = 30V 5 50 R R A Total capacitance C V = 0 V, f = 1 MHz 120 pF T R Marking Equivalent Circuit (Top View) HP Start of commercial production 2010-12 2014-03-01 1CUS05F30 Handling Precaution Schottky barrier diodes have reverse current characteristic compared to the other diodes. There is a possibility SBD may cause thermal runaway when it is used under high temperature or high voltage. Please take forward and reverse loss into consideration during design. 2014-03-01 2

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

Toshiba may also be referenced as

Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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