CUS05S40 Schottky Barrier Diode Silicon Epitaxial CUS05S40CUS05S40CUS05S40CUS05S40 1. 1. 1. 1. ApplicationsApplicationsApplicationsApplications High-Speed Switching 2. 2. FeaturesFeatures 2. 2. FeaturesFeatures (1) Small package (2) Low forward voltage: V (2) = 0.56 V (typ.) ( I = 500mA) F F 3. 3. 3. 3. Packaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal Circuit 1: Cathode 2: Anode USC Start of commercial production 2013-11 2014-04-07 1 Rev.2.0CUS05S40 4. 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 = 25 )) 4. 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 = 25 )) aa aa Characteristics Symbol Note Rating Unit Peak reverse voltage V 40 V RM Average rectified current I (Note 1) 500 mA O Non-repetitive peak forward surge current I (Note 2) 5 A FSM Junction temperature T 125 j Storage temperature T -55 to 125 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on an FR4 board. (25.4 mm 25.4 mm 1.6 mm, Cu Pad: 645 mm2) Note 2: Measured with a 10 ms pulse. 5. 5. 5. 5. Electrical Characteristics (Unless otherwise specified, TElectrical Characteristics (Unless otherwise specified, TElectrical Characteristics (Unless otherwise specified, TElectrical Characteristics (Unless otherwise specified, T = 25 = 25 = 25 = 25 )))) aaaa Characteristics Symbol Test Condition Min Typ. Max Unit Forward voltage V (1) I = 100 mA (Pulse test) 0.31 0.35 V F F V (2) I = 500 mA (Pulse test) 0.56 0.60 F F Reverse current I (1) V = 10 V (Pulse test) 30 A R R I (2) V = 40 V (Pulse test) 50 R R Total capacitance C V = 0 V, f = 1 MHz 42 pF t R 6. 6. MarkingMarking 6. 6. MarkingMarking Fig. Fig. Fig. Fig. 6.16.16.16.1 MarkingMarkingMarkingMarking Marking Code Part Number 7A CUS05S40 2014-04-07 2 Rev.2.0