DF2S16FS ESD Protection Diodes Silicon Epitaxial Planar DF2S16FSDF2S16FSDF2S16FSDF2S16FS 1. 1. ApplicationsApplications 1. 1. ApplicationsApplications ESD Protection Note: This product is designed for protection against electrostatic discharge (ESD) and is not intended for any other purpose, including, but not limited to, voltage regulation. 2. 2. 2. 2. Packaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal Circuit 1: Cathode 2: Anode SOD-923 1: Cathode 2: Anode fSC The SOD-923 package is recommended. Package Product name SOD-923 DF2S16FS,L3M (Note 1) fSC DF2S16FS,L3J , DF2S16FS,L3F Note 1: The product name of the devices housed in the SOD-923 package are suffixed with the. Start of commercial production 2013-12 2016 Toshiba Corporation 2016-07-27 1 Rev.4.0DF2S16FS 3. 3. 3. 3. Absolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 = 25 = 25 = 25)))) aaaa Characteristics Symbol Rating Unit Electrostatic discharge voltage (IEC61000-4-2)(Contact) V 12 kV ESD Junction temperature T 150 j Storage temperature T -55 to 150 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 4. 4. Electrical Characteristics (Unless otherwise specified, TElectrical Characteristics (Unless otherwise specified, T = 25 = 25)) 4. 4. Electrical Characteristics (Unless otherwise specified, TElectrical Characteristics (Unless otherwise specified, T = 25 = 25)) aa aa V : Working peak reverse RWM voltage V : Zener voltage Z V : Reverse breakdown voltage BR Z : Dynamic impedance Z I : Zener current Z I : Reverse breakdown current BR I : Reverse current R V : Clamp voltage C I : Peak pulse current PP R : Dynamic resistance DYN I : Forward current F V : Forward voltage F Fig. Fig. Fig. Fig. 4.14.14.14.1 Definitions of Electrical Characteristics Definitions of Electrical Characteristics Definitions of Electrical Characteristics Definitions of Electrical Characteristics Characteristics Symbol Note Test Condition Min Typ. Max Unit Working peak reverse voltage V 12 V RWM Zener voltage V I = 5 mA 15.3 16.0 17.1 V Z Z (Reverse breakdown voltage) (V ) (I ) BR BR Dynamic impedance Z I = 5 mA 35 Z Z (I ) BR Reverse current I V = 12 V 0.5 A R RWM Clamp voltage V (Note1) I = 1 A 22 V C PP (Reverse side) I = 1 A 2.0 V PP (Forward side) Total capacitance C V = 0 V, f = 1 MHz 10 pF t R Note1: Based on IEC61000-4-5 8/20 s pulse. 2016 Toshiba Corporation 2016-07-27 2 Rev.4.0