Product Information

DF2S23P2FU,H3F

DF2S23P2FU,H3F electronic component of Toshiba

Datasheet
ESD Suppressors TVS Diodes Uni-Directional ESD protection diode VRWM:21V IPP: 14A Vesd:+-30kV
Manufacturer: Toshiba
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Price (USD)

1: USD 0.4903 ea
Line Total: USD 0.49

5577 - Global Stock
Ships to you between
Thu. 23 May to Mon. 27 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
5286 - WHS 1


Ships to you between Thu. 23 May to Mon. 27 May

MOQ : 1
Multiples : 1
1 : USD 0.4903
10 : USD 0.3405
100 : USD 0.1413
1000 : USD 0.1075
3000 : USD 0.0882
9000 : USD 0.0785
24000 : USD 0.0761
45000 : USD 0.0688
99000 : USD 0.0676

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Series
Product Type
Vesd - Voltage ESD Contact
Vesd - Voltage ESD Air Gap
Polarity
Number of Channels
Termination Style
Breakdown Voltage
Working Voltage
Clamping Voltage
Ipp - Peak Pulse Current
Cd - Diode Capacitance
Package / Case
Pppm - Peak Pulse Power Dissipation
Maximum Operating Temperature
Packaging
Brand
Operating Supply Voltage
Factory Pack Quantity :
Subcategory
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Additional Infomation About Product

DF2S23P2FU ESD Protection Diodes Silicon Epitaxial Planar DF2S23P2FUDF2S23P2FUDF2S23P2FUDF2S23P2FU 1. 1. GeneralGeneral 1. 1. GeneralGeneral The DF2S23P2FU is a TVS diode (ESD protection diode) protects semiconductor devices used in mobile device interfaces and other applications to protect against static electricity and noise. The DF2S23P2FU has realized high I , in order to protect a semiconductor devices from the indirect lightning PP stroke and the transition voltage (at the time of power activation). Furthermore, the DF2S23P2FU is housed in an standard package (2.5 mm 1.25 mm), it can be used for various applications. 2. 2. 2. 2. ApplicationsApplicationsApplicationsApplications Mobile Equipment Smartphones Tablets Notebook PCs Desktop PCs Note: This product is designed for protection against electrostatic discharge (ESD) and is not intended for any other purpose, including, but not limited to, voltage regulation. 3. 3. FeaturesFeatures 3. 3. FeaturesFeatures (1) Suitable for use with a 20 V signal line. (V 21 V) RWM (2) Protects devices with its high ESD performance. (V = 30 kV (Contact / Air) IEC61000-4-2) ESD (3) Low dynamic resistance protects semiconductor devices from static electricity and noise. (R = 0.13 (typ.)) DYN (4) Low clamping voltage characteristic protects semiconductor devices from static electricity and noise. (V = 30 V I = 14 A (typ.)) C PP (5) Compact package is suitable for use in high density board layouts such as in mobile devices. (2.5 mm 1.25 mm size (Nickname: USC)) 4. 4. 4. 4. PackagingPackagingPackagingPackaging USC Start of commercial production 2018-08 2017-2018 2018-08-07 1 Toshiba Electronic Devices & Storage Corporation Rev.2.0DF2S23P2FU 5. 5. 5. 5. Example of Circuit DiagramExample of Circuit DiagramExample of Circuit DiagramExample of Circuit Diagram 6. 6. 6. 6. Quick Reference DataQuick Reference DataQuick Reference DataQuick Reference Data Characteristics Symbol Note Test Condition Min Typ. Max Unit Working peak reverse voltage V (Note 1) 21 V RWM Dynamic resistance R (Note 2) 0.13 DYN Electrostatic discharge voltage V (Note 3) 30 kV ESD (IEC61000-4-2) (Contact) Note 1: Recommended operating condition. Note 2: TLP parameters: Z0 = 50 , tp = 100 ns, tr = 300 ps, averaging window: t1 = 30 ns to t2 = 60 ns, extraction of dynamic resistance using least squares fit of TLP characteristics between I = 16 A and I = 30 A. PP1 PP2 Note 3: Criterion: No damage to devices. 6.1. 6.1. 6.1. 6.1. ESD Clamp Waveform (Note)ESD Clamp Waveform (Note)ESD Clamp Waveform (Note)ESD Clamp Waveform (Note) Fig. Fig. Fig. Fig. 6.1.16.1.16.1.16.1.1 +8 kV+8 kV+8 kV+8 kV Fig. Fig. Fig. Fig. 6.1.26.1.26.1.26.1.2 -8 kV-8 kV-8 kV-8 kV Fig. Fig. Fig. Fig. 6.1.36.1.36.1.36.1.3 IEC61000-4-2 (Contact)IEC61000-4-2 (Contact)IEC61000-4-2 (Contact)IEC61000-4-2 (Contact) Note: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. 2017-2018 2018-08-07 2 Toshiba Electronic Devices & Storage Corporation Rev.2.0

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS

Toshiba may also be referenced as

Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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