Product Information

DF5A3.6CFU(TE85L,F

DF5A3.6CFU(TE85L,F electronic component of Toshiba

Datasheet
ESD Suppressors / TVS Diodes ESD Low Capacitance Protection Diode

Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3000: USD 0.0887 ea
Line Total: USD 266.1

0 - Global Stock
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
0 - WHS 1


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 3000
Multiples : 3000
3000 : USD 0.0866
9000 : USD 0.0743
24000 : USD 0.0718
45000 : USD 0.0706

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Series
Product Type
Vesd - Voltage ESD Contact
Polarity
Number of Channels
Termination Style
Breakdown Voltage
Working Voltage
Cd - Diode Capacitance
Package / Case
Maximum Operating Temperature
Packaging
Brand
Pd - Power Dissipation
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
LoadingGif

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DF5A3.6CFU TOSHIBA Diodes for Protecting against ESD DF5A3.6CFU Product for Use Only as Protection against Electrostatic Unit: mm Discharge (ESD) * This product is for protection against electrostatic discharge (ESD) only and is not intended for any other usage, including without limitation, the constant voltage diode application. z The mounting of four devices on an ultra-compact package allows the number of parts and the mounting cost to be reduced. z Low terminal capacitance : C = 52 pF (typ.) T Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Power dissipation P 200 mW 1.CATHODE 1 Junction temperature T 150 C 2. ANODE j 3.CATHODE2 Storage temperature range T 55 to 150 C stg 4.CATHODE3 5.CATHODE4 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in JEDEC temperature, etc.) may cause this product to decrease in the JEITA reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute TOSHIBA 1-2V1B maximum ratings. Weight: 0.0062 g (typ.) Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25C) Characteristic Symbol Test Condition Min Typ. Max Unit Zener voltage V I = 5 mA 3.4 3.6 3.8 V Z Z Dynamic impedance Z I = 5 mA 130 Z Z Reverse current I V = 1.8 V 100 A R R Terminal capacitance C V = 0 V, f = 1 MHz 52 pF T R (between Cathode and Anode) Guaranteed Level of ESD Immunity Test Condition ESD Immunity Level IEC61000-4-2 15 kV (Contact discharge) Criterion: No damage to device elements Start of commercial production 2003-06 1 2014-03-01 DF5A3.6CFU Marking Equivalent Circuit (Top View) 5W CT - VR IZ - VZ 100 100 f=1MHz Ta=25C 10 1 10 0 0.1 0 0.01 1 0.001 0 01 2 345 012 3 4567 89 10 VR REVERSE VOLTAGE VR (V) VZ ZENER VOLTAGE Vz (V) 2 2014-03-01 ZENER CURRENT IZ (mA) IZ(mA) TOTAL CAPACITANCTCE CpFT (pF) )

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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