Product Information

DF5A3.6CJE,LM

DF5A3.6CJE,LM electronic component of Toshiba

Datasheet
ESD Suppressors / TVS Diodes X34 ESD Protection Diode ESV package

Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

4000: USD 0.0482 ea
Line Total: USD 192.8

0 - Global Stock
MOQ: 4000  Multiples: 4000
Pack Size: 4000
Availability Price Quantity
0 - WHS 1


Ships to you between Wed. 29 May to Tue. 04 Jun

MOQ : 4000
Multiples : 4000
4000 : USD 0.0482
8000 : USD 0.0389
24000 : USD 0.0372
48000 : USD 0.036
100000 : USD 0.0323

0 - WHS 2


Ships to you between Tue. 04 Jun to Thu. 06 Jun

MOQ : 1
Multiples : 1
1 : USD 0.7429
10 : USD 0.5148
100 : USD 0.0878
1000 : USD 0.0643
4000 : USD 0.0573
8000 : USD 0.0433
24000 : USD 0.0409
48000 : USD 0.0386
100000 : USD 0.0351

     
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RoHS - XON
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DF5A3.6CJE TOSHIBA Diodes for Protecting against ESD DF5A3.6CJE Product for Use Only as Protection against Electrostatic Unit: mm Discharge (ESD) * This product is for protection against electrostatic discharge (ESD) only and is not intended for any other usage, including without limitation, the constant voltage diode application. z The mounting of four devices on an ultra-compact package allows the number of parts and the mounting cost to be reduced. z Low terminal capacitance : C = 52 pF (typ.) T Absolute Maximum Ratings (Ta = 25C) 1.CATHODE 1 Characteristic Symbol Rating Unit 2. ANODE 3.CATHODE2 Power dissipation P 100 mW 4.CATHODE3 5.CATHODE4 Junction temperature T 150 C j Storage temperature range T 55 to 150 C stg JEDEC Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in JEITA temperature, etc.) may cause this product to decrease in the TOSHIBA 1-2W1A reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute Weight: 0.0062 g (typ.) maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25C) Characteristic Symbol Test Condition Min Typ. Max Unit Zener voltage V I = 5 mA 3.4 3.6 3.8 V Z Z Dynamic impedance Z I = 5 mA 130 Z Z Reverse current I V = 1.8 V 100 A R R Terminal capacitance C V = 0 V, f = 1 MHz 52 pF T R (between Cathode and Anode) Guaranteed Level of ESD Immunity Test Condition ESD Immunity Level IEC61000-4-2 15 kV (Contact discharge) Criterion: No damage to device elements Start of commercial production 2003-07 1 2014-03-01 DF5A3.6CJE Marking Equivalent Circuit (Top View) 5W CT - VR IZ - VZ 100 100 f=1MHz Ta=25C 10 1 10 0 0.1 0 0.01 1 0.001 0 01 2 345 012 3 4567 89 10 VR REVERSE VOLTAGE VR (V) VZ ZENER VOLTAGE Vz (V) 2 2014-03-01 ZENER CURRENT IZ (mA) IZ(mA) TOTAL CAPACITANCTCE CpFT (pF) )

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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