Product Information

DF5A6.8F,LF

DF5A6.8F,LF electronic component of Toshiba

Datasheet
ESD Suppressors / TVS Diodes ESD Standard Type Protection Diode
Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.8392 ea
Line Total: USD 0.84

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Thu. 23 May to Mon. 27 May

MOQ : 1
Multiples : 1

Stock Image

DF5A6.8F,LF
Toshiba

1 : USD 0.8392
10 : USD 0.6606
100 : USD 0.0945
1000 : USD 0.0646
3000 : USD 0.0544
9000 : USD 0.0465
24000 : USD 0.0431

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Series
Product Type
Vesd - Voltage ESD Contact
Polarity
Number of Channels
Termination Style
Breakdown Voltage
Working Voltage
Cd - Diode Capacitance
Package / Case
Maximum Operating Temperature
Packaging
Brand
Pd - Power Dissipation
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
LoadingGif

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Additional Infomation About Product

DF5A6.8F TOSHIBA Diodes for Protecting against ESD DF5A6.8F Product for Use Only as Protection against Electrostatic Unit: mm Discharge (ESD) * This product is for protection against electrostatic discharge (ESD) only and is not intended for any other usage, including without limitation, the constant voltage diode application. The mounting of four devices on an ultra-compact package allows the number of parts and the mounting cost to be reduced. Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Power dissipation P 200 MW 1.CATHODE 1 Junction temperature T 125 C j 2. ANODE Storage temperature range T 55 to 125 C stg 3.CATHODE2 4.CATHODE3 5.CATHODE4 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in JEDEC temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. JEITA operating temperature/current/voltage, etc.) are within the absolute TOSHIBA 1-3H1A maximum ratings. Please design the appropriate reliability upon reviewing the Weight: 0.014 g (typ.) Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25C) Characteristic Symbol Test Condition Min Typ. Max Unit Zener voltage V I = 5 mA 6.4 6.8 7.2 V Z Z Dynamic impedance Z I = 5 mA 10 25 Z Z Knee dynamic impedance Z I = 0.5 mA 30 ZK Z Reverse current I V = 5 V 0.5 A R R Terminal capacitance C V = 0, f = 1 MHz 45 pF T R (between Cathode and Anode) Guaranteed Level of ESD Immunity Test Condition ESD Immunity Level IEC61000-4-2 30kV (Contact discharge) Criterion: No damage to device elements Start of commercial production 1998-03 1 2014-03-01 0.16DF5A6.8F Marking Equivalent Circuit (Top View) CT - VR 100 Ta=25C f=1MHz 10 02 468 REVERSE VOLTAGE VR (V) 2 2014-03-01 TOTAL CAPACITANCE CT (pF)

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS

Toshiba may also be referenced as

Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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