HN2S03FUTE85LF Toshiba

HN2S03FU TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type HN2S03FU Unit: mm High Speed Switching Application z HN2S03FU is composed of 3 independent diodes. z Low forward voltage : V = 0.50V (typ.) F (3) z Low reverse current : I = 0.5A (max) R z Small total capacitance : C = 3.9pF (typ.) T Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Maximum (peak) reverse Voltage V 25 V RM Reverse voltage V 20 V R Maximum (peak) forward current I 100 * mA FM Average forward current I 50 * mA O Surge current (10ms) I 1 * A FSM Power dissipation P 200 ** mW Junction temperature T 125 C j JEDEC Storage temperature range T 55 to 125 C stg JEITA TOSHIBA 1-2T1C Operating temperature range T 40 to 110 C opr Weight: 6.2 mg (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). * : This is absolute maximum rating of single diode (Q1 or Q2 or Q3). In the case of using 2 or 3 diodes, the absolute maximum ratings per diodes is 75 % of the single diode one. ** :Total rating Electrical Characteristics (Q1, Q2, Q3 Common, Ta = 25C) Test Characteristic Symbol Test Condition Min Typ. Max Unit Circuit V I = 1mA 0.33 F (1) F Forward voltage V I = 5mA 0.38 F (2) F V V I = 50mA 0.50 0.55 F (3) F Reverse current I V = 20V 0.5 A R R Total capacitance C V = 0, f = 1MH 3.9 T R z pF Start of commercial production 2001-11 1 2014-03-01 HN2S03FU Pin Assignment (Top View) Marking A8 2 2014-03-01