Product Information

RN1102MFV,L3F

RN1102MFV,L3F electronic component of Toshiba

Datasheet
Bipolar Transistors - Pre-Biased Bias Resistor Built-in transistor
Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

20: USD 0.0393 ea
Line Total: USD 0.79

6421 - Global Stock
Ships to you between
Fri. 03 May to Wed. 08 May
MOQ: 20  Multiples: 20
Pack Size: 20

 More Buying Options & Price Grid(s)

Availability Price Quantity
6576 - Global Stock


Ships to you between Fri. 26 Apr to Thu. 02 May

MOQ : 1
Multiples : 1
1 : USD 0.082
10 : USD 0.0813
25 : USD 0.0801
100 : USD 0.0438
250 : USD 0.0435
500 : USD 0.0316
1000 : USD 0.031
3000 : USD 0.031
6000 : USD 0.031

6421 - Global Stock


Ships to you between
Fri. 03 May to Wed. 08 May

MOQ : 20
Multiples : 20
20 : USD 0.0393
200 : USD 0.0309
600 : USD 0.0263
2000 : USD 0.0236
8000 : USD 0.0212
16000 : USD 0.0198

6576 - Global Stock


Ships to you between Fri. 26 Apr to Thu. 02 May

MOQ : 244
Multiples : 1
244 : USD 0.0438
250 : USD 0.0435
500 : USD 0.0316
1000 : USD 0.031

Read More Specifications

     
Manufacturer
Product Category
Transistor Polarity
Typical Input Resistor
Typical Resistor Ratio
Mounting Style
Package / Case
DC Collector/Base Gain hFE Min
Collector- Emitter Voltage VCEO Max
Continuous Collector Current
Series
Packaging
Emitter- Base Voltage Vebo
Brand
Cnhts
Hts Code
Mxhts
Pd - Power Dissipation
Product Type
Factory Pack Quantity :
Subcategory
Taric
LoadingGif

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Additional Infomation About Product

The RN1102MFV,L3F with Bipolar Transistors is a pre-biased bias resistor built-in transistor manufactured by Toshiba. It is a NPN silicon epitaxial planar transistor with a built-in bias resistors. It is a surface-mount package with dimensions of 2.9mm × 1.6mm × 1.2mm. It has a maximum allowable collector to emitter voltage of 45V, a maximum current gain of 200 and a maximum collector current of 500mA. It is also rated for a maximum power dissipation of 1.5W and has a maximum junction temperature of 150 degrees Celsius. The package is suitable for high-density mounting. It has a high collector-base voltage withstand and a low collector-emitter saturation voltage. The high-speed switching performance and its ability to address space constraints make it ideal for consumer and industrial automation applications.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Toshiba may also be referenced as

Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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