Product Information

SSM3J327R,LF(B

Name: SSM3J327R,LF(B
Brand: Toshiba
SKU: SSM3J327RLFB_Toshiba
Availability: OutOfStock
Rating: 5 (11 reviews)

SSM3J327R,LF(B electronic component of Toshiba

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See Product Specifications
Datasheet

Transistor: P-MOSFET; unipolar; -20V; -3.9A; 1W; SOT23F

Manufacturer: Toshiba

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

770: USD 0.1157 ea
Line Total: USD 89.09

0 - Global Stock

MOQ: 770 Multiples: 1
Pack Size: 1

More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 - WHS 1 Ships to you between Fri. 24 May to Thu. 30 May MOQ : 298 Multiples : 1 SSM3J327R,LF(B Toshiba	298 : USD 0.0952 500 : USD 0.0896

0 - WHS 2 Ships to you between Fri. 24 May to Thu. 30 May MOQ : 5 Multiples : 5 SSM3J327R,LF(B Toshiba	5 : USD 0.2119 25 : USD 0.117 100 : USD 0.104 195 : USD 0.0845 530 : USD 0.0806

0 - WHS 3 Ships to you between Fri. 24 May to Thu. 30 May MOQ : 770 Multiples : 1 SSM3J327R,LF(B Toshiba	770 : USD 0.1157 1000 : USD 0.1134

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Additional Infomation About Product

SSM3J327R,LF is an N-Channel depletion mode MOSFET manufactured by Toshiba. It has a drain current rating of 3A, a drain-source breakdown voltage of -20V, and a gate-source threshold voltage of -6V. It is typically used in DC-DC converters and motor control applications.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Toshiba may also be referenced as

Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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Manufacturer Toshiba Toshiba
Product Category MOSFET MOSFET
Mounting Smd Smd
Kind Of Package REEL , TAPE REEL , TAPE
Features Of Semiconductor Devices Esd Protected Gate Esd Protected Gate
Case Sot23f Sot23f
Polarisation Unipolar Unipolar
Type Of Transistor P - Mosfet P - Mosfet
Drain-Source Voltage - 20 V - 20 V
Drain Current - 3.9 A - 3.9 A
On-State Resistance 240 mOhms 240 mOhms
Gate-Source Voltage 8 V 8 V
Gate Charge 4.6 nC 4.6 nC
Power Dissipation 1 W 1 W