SSM6N40TU,LXGF Toshiba

SSM6N40TU,LXGF electronic component of Toshiba
SSM6N40TU,LXGF Toshiba
SSM6N40TU,LXGF MOSFETs
SSM6N40TU,LXGF  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of SSM6N40TU,LXGF MOSFETs across the USA, India, Europe, Australia, and various other global locations. SSM6N40TU,LXGF MOSFETs are a product manufactured by Toshiba. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. SSM6N40TU,LXGF
Manufacturer: Toshiba
Category: MOSFETs
Description: Transistor: N-MOSFET x2; unipolar; 30V; 1.6A; 0.5W; UF6
Datasheet: SSM6N40TU,LXGF Datasheet (PDF)
Price (USD)
3: USD 0.2282 ea
Line Total: USD 0.68 
Availability : 320
  
Ship by Wed. 03 Sep to Fri. 05 Sep
QtyUnit Price
3$ 0.2282
25$ 0.1764
100$ 0.1554
141$ 0.1358
386$ 0.1288

Availability 320
Ship by Wed. 03 Sep to Fri. 05 Sep
MOQ : 3
Multiples : 1
QtyUnit Price
3$ 0.2282
25$ 0.1764
100$ 0.1554
141$ 0.1358
386$ 0.1288

   
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Product Category
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Case
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Drain-Source Voltage
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SSM6N40TU,LXGF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SSM6N40TU,LXGF and other electronic components in the MOSFETs category and beyond.

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The SSM6N40TU,LXGF is an insulated-gate bipolar transistor (IGBT) manufactured by Toshiba. It is a high-speed, high-current IGBT with excellent switching characteristics. It is ideal for use in high-frequency switching applications such as power supplies and motor control. It has a maximum leakage current of 2.5 mA, a collector-emitter voltage of 600 V, and a high blocking voltage of 1200 V. The transistor also supports a maximum gate-emitter voltage of 8 V and a maximum collector current of 40 A.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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