Product Information

SSM6N40TU,LXGF

SSM6N40TU,LXGF electronic component of Toshiba

Datasheet
Transistor: N-MOSFET x2; unipolar; 30V; 1.6A; 0.5W; UF6
Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3: USD 0.2723 ea
Line Total: USD 0.82

406 - Global Stock
Ships to you between
Fri. 24 May to Thu. 30 May
MOQ: 3  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
406 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 3
Multiples : 1
3 : USD 0.2691
25 : USD 0.2015
90 : USD 0.1833
100 : USD 0.1781
246 : USD 0.1729

Read More Specifications

     
Manufacturer
Product Category
Polarisation
Mounting
Case
Kind Of Package
Type Of Transistor
Drain-Source Voltage
Gate-Source Voltage
Drain Current
On-State Resistance
Gate Charge
Power Dissipation
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Additional Infomation About Product

The SSM6N40TU,LXGF is an insulated-gate bipolar transistor (IGBT) manufactured by Toshiba. It is a high-speed, high-current IGBT with excellent switching characteristics. It is ideal for use in high-frequency switching applications such as power supplies and motor control. It has a maximum leakage current of 2.5 mA, a collector-emitter voltage of 600 V, and a high blocking voltage of 1200 V. The transistor also supports a maximum gate-emitter voltage of 8 V and a maximum collector current of 40 A.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Toshiba may also be referenced as

Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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