SSM6K513NU MOSFETs Silicon N-channel MOS (U-MOS-H) SSM6K513NUSSM6K513NUSSM6K513NUSSM6K513NU 1. 1. ApplicationsApplications 1. 1. ApplicationsApplications Power Management Switches 2. 2. 2. 2. FeaturesFeaturesFeaturesFeatures (1) 4.5 V drive (2) Low drain-source on-resistance : R = 8.0 m (typ.) ( V = 4.5 V) DS(ON) GS R = 6.5 m (typ.) ( V = 10 V) DS(ON) GS 3. 3. Packaging and Pin AssignmentPackaging and Pin Assignment 3. 3. Packaging and Pin AssignmentPackaging and Pin Assignment 1, 2, 5, 6: Drain 3: Gate 4: Source UDFN6B Start of commercial production 2016-05 2016-2018 2018-06-01 1 Toshiba Electronic Devices & Storage Corporation Rev.4.0SSM6K513NU 4. 4. 4. 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 = 25 = 25 = 25)))) aaaa Characteristics Symbol Rating Unit Drain-source voltage V 30 V DSS Gate-source voltage (Note 1) V 20 GSS Drain current (DC) I 15 A D Drain current (pulsed) (Note 2) I 50 DP Power dissipation (Note 3) P 1.25 W D Power dissipation (t 10 s) (Note 3) 2.5 Single-pulse avalanche energy (Note 4) E 37.6 mJ AS Avalanche current I 6.3 A AR Channel temperature T 150 ch Storage temperature T -55 to 150 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: +20 V /-16 V ensured at DC condition. -20 V ensured at pulse condition (duty 5 %). Note 2: Pulse width (PW) 10 s, duty = 1 % Note 3: Device mounted on a FR4 board. (25.4 mm 25.4 mm 1.6 mm, Cu Pad: 645 mm2) Note 4: V = 24 V, T = 25 (Initial state), L = 1 mH, R = 25 DD ch G Note: The MOSFETs in this device are sensitive to electrostatic discharge. When handling this device, the worktables, operators, soldering irons and other objects should be protected against anti-static discharge. Note: The channel-to-ambient thermal resistance, R , and the drain power dissipation, P , vary according to th(ch-a) D the board material, board area, board thickness and pad area. When using this device, be sure to take heat dissipation fully into account. 2016-2018 2018-06-01 2 Toshiba Electronic Devices & Storage Corporation Rev.4.0