X-On Electronics has gained recognition as a prominent supplier of SSM6K781G,LF MOSFETs across the USA, India, Europe, Australia, and various other global locations. SSM6K781G,LF MOSFETs are a product manufactured by Toshiba. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SSM6K781G,LF Toshiba

SSM6K781G,LF electronic component of Toshiba
SSM6K781G,LF Toshiba
SSM6K781G,LF MOSFETs
SSM6K781G,LF  Semiconductors

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See Product Specifications
Part No. SSM6K781G,LF
Manufacturer: Toshiba
Category: MOSFETs
Description: N-Channel 12 V 7A (Ta) 1.6W (Ta) Surface Mount 6-WCSPC (1.5x1.0)
Datasheet: SSM6K781G,LF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.1642 ea
Line Total: USD 492.6 
Availability - 0
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
0
Ship by Wed. 18 Jun to Tue. 24 Jun
MOQ : 3000
Multiples : 3000
3000 : USD 0.3008
6000 : USD 0.2998
9000 : USD 0.2986
12000 : USD 0.2976
15000 : USD 0.2965
24000 : USD 0.2953
30000 : USD 0.2944
75000 : USD 0.2933
150000 : USD 0.292

0
Ship by Wed. 18 Jun to Tue. 24 Jun
MOQ : 3000
Multiples : 3000
3000 : USD 0.2238
6000 : USD 0.201
15000 : USD 0.1872
30000 : USD 0.1775

0
Ship by Wed. 18 Jun to Tue. 24 Jun
MOQ : 1
Multiples : 1
1 : USD 0.6375
10 : USD 0.5208
100 : USD 0.3882
500 : USD 0.305
1000 : USD 0.2357

0
Ship by Wed. 18 Jun to Tue. 24 Jun
MOQ : 1
Multiples : 1
1 : USD 0.6375
10 : USD 0.5208
100 : USD 0.3882
500 : USD 0.305
1000 : USD 0.2357

0
Ship by Wed. 18 Jun to Tue. 24 Jun
MOQ : 3000
Multiples : 3000
3000 : USD 0.1642
6000 : USD 0.1615
12000 : USD 0.1587
18000 : USD 0.1559
24000 : USD 0.1532

0
Ship by Mon. 16 Jun to Wed. 18 Jun
MOQ : 1
Multiples : 1
1 : USD 1.2096
10 : USD 0.5702
100 : USD 0.3089
500 : USD 0.2495
1000 : USD 0.1976
3000 : USD 0.1825
6000 : USD 0.1728
9000 : USD 0.1598
24000 : USD 0.1544

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Transistor Type
Brand
Configuration
Height
Length
Series
Width
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
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We are delighted to provide the SSM6K781G,LF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SSM6K781G,LF and other electronic components in the MOSFETs category and beyond.

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SSM6K781G MOSFETs Silicon N-Channel MOS SSM6K781GSSM6K781GSSM6K781GSSM6K781G 1. 1. 1. 1. ApplicationsApplicationsApplicationsApplications Power Management Switches 2. 2. FeaturesFeatures 2. 2. FeaturesFeatures (1) 1.5-V gate drive voltage. (2) Low drain-source on-resistance : R = 17.9 m (typ.) ( V = 2.5 V, I = 1.5 A) DS(ON) GS D R = 14.4 m (typ.) ( V = 4.5 V, I = 1.5 A) DS(ON) GS D 3. 3. 3. 3. Packaging and Pin AssignmentPackaging and Pin AssignmentPackaging and Pin AssignmentPackaging and Pin Assignment A1: Drain A2: Gate B1: Drain B2: Source C1: Drain C2: Source WCSP6C 4. 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 = 25 )) 4. 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 = 25 )) aa aa Characteristics Symbol Rating Unit Drain-source voltage V 12 V DSS Gate-source voltage V 8 GSS Drain current (DC) (Note 1) I 7 A D Drain current (pulsed) (Note 1), (Note 2) I 14 DP Power dissipation (Note 3) P 1.6 W D Power dissipation (t 10 s) (Note 3) P 2.9 D Channel temperature T 150 ch Storage temperature T -50 to 150 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Ensure that the channel temperature does not exceed 150 . Note 2: Pulse width (PW) 10 ms, duty 1% Note 3: Device mounted on an FR4 board. (40.0 mm 40.0 mm 1.6 mm ,Cu Pad: 1369 mm2 4 layer) Start of commercial production 2013-09 2014-04-04 1 Rev.3.0SSM6K781G Note: The MOSFETs in this device are sensitive to electrostatic discharge. When handling this device, the worktables, operators, soldering irons and other objects should be protected against anti-static discharge. Note: The channel-to-ambient thermal resistance, R , and the drain power dissipation, P , vary according to th(ch-a) D the board material, board area, board thickness and pad area. When using this device, be sure to take heat dissipation fully into account. 2014-04-04 2 Rev.3.0

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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