SSM6L61NU MOSFETs Silicon P-/N-Channel MOS SSM6L61NUSSM6L61NUSSM6L61NUSSM6L61NU 1. 1. ApplicationsApplications 1. 1. ApplicationsApplications Power Management Switches DC-DC Converters 2. 2. 2. 2. FeaturesFeaturesFeaturesFeatures (1) Low drain-source on-resistance Q1 N-channel: R = 33 m (max) ( V = 4.5 V) DS(ON) GS R = 45 m (max) ( V = 2.5 V) DS(ON) GS R = 74 m (max) ( V = 1.8 V) DS(ON) GS R = 108 m (max) ( V = 1.5 V) DS(ON) GS Q2 P-channel: R = 56 m (max) ( V = -4.5 V) DS(ON) GS R = 76 m (max) ( V = -2.5 V) DS(ON) GS R = 157 m (max) ( V = -1.8 V) DS(ON) GS 3. 3. Packaging and Internal CircuitPackaging and Internal Circuit 3. 3. Packaging and Internal CircuitPackaging and Internal Circuit 1: Source 1 2: Gate 1 3: Drain 2 4: Source 2 5: Gate 2 6: Drain 1 UDFN6 Start of commercial production 2015-12 2016 Toshiba Corporation 2016-04-14 1 Rev.2.0SSM6L61NU 4. 4. 4. 4. Absolute Maximum Ratings (Note)Absolute Maximum Ratings (Note)Absolute Maximum Ratings (Note)Absolute Maximum Ratings (Note) 4.1. 4.1. Q1 Absolute Maximum Ratings (Unless otherwise specified, TQ1 Absolute Maximum Ratings (Unless otherwise specified, T = 25 = 25 )) 4.1. 4.1. Q1 Absolute Maximum Ratings (Unless otherwise specified, TQ1 Absolute Maximum Ratings (Unless otherwise specified, T = 25 = 25 )) aa aa Characteristics Symbol Rating Unit Drain-source voltage V 20 V DSS Gate-source voltage V 8 GSS Drain current (DC) (Note 1) I 4 A D Drain current (pulsed) (Note 1), (Note 2) I 16 DP Note 1: Ensure that the channel temperature does not exceed 150 . Note 2: Pulse width (PW) 10 s, duty 1 % 4.2. 4.2. 4.2. 4.2. Q2 Absolute Maximum Ratings (Unless otherwise specified, TQ2 Absolute Maximum Ratings (Unless otherwise specified, TQ2 Absolute Maximum Ratings (Unless otherwise specified, TQ2 Absolute Maximum Ratings (Unless otherwise specified, T = 25 = 25 = 25 = 25 )))) aaaa Characteristics Symbol Rating Unit Drain-source voltage V -20 V DSS Gate-source voltage V 12 GSS Drain current (DC) (Note 1) I -4 A D Drain current (pulsed) (Note 1), (Note 2) I -16 DP Note 1: Ensure that the channel temperature does not exceed 150 . Note 2: Pulse width (PW) 10 s, duty 1 % 4.3. 4.3. Absolute Maximum Ratings (Unless otherwise specified, TAbsolute Maximum Ratings (Unless otherwise specified, T = 25 = 25 )) 4.3. 4.3. Absolute Maximum Ratings (Unless otherwise specified, TAbsolute Maximum Ratings (Unless otherwise specified, T = 25 = 25 )) aa aa (Q1, Q2 Common)(Q1, Q2 Common) (Q1, Q2 Common)(Q1, Q2 Common) Characteristics Symbol Rating Unit Power dissipation (Note 1) P 1 W D Power dissipation (t 10 s) (Note 1) P 2 D Channel temperature T 150 ch Storage temperature T -55 to 150 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Total rating. Device mounted on a FR4 board.(25.4 mm 25.4 mm 1.6 mm, Cu pad: 645 mm2) Note: This transistor is sensitive to electrostatic discharge and should be handled with care. Note: The junction-to-ambient thermal resistance, R , and the drain power dissipation, P , vary according to the th(j-a) D board material, board area, board thickness and pad area. When using this device, be sure to take heat dissipation fully into account. 2016 Toshiba Corporation 2016-04-14 2 Rev.2.0