Product Information

SSM6N35FE,LM(T

SSM6N35FE,LM(T electronic component of Toshiba

Datasheet
Transistor: N-MOSFET x2; unipolar; 20V; 180mA; 150mW; SOT563
Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 0.1901 ea
Line Total: USD 0.95

0 - Global Stock
MOQ: 5  Multiples: 5
Pack Size: 5

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 5
Multiples : 5
5 : USD 0.2128
25 : USD 0.1316
100 : USD 0.1162
170 : USD 0.0952
465 : USD 0.091

Read More Specifications

     
Manufacturer
Product Category
Mounting
Kind Of Package
Case
Polarisation
Features Of Semiconductor Devices
Type Of Transistor
Drain-Source Voltage
Drain Current
Gate-Source Voltage
On-State Resistance
Power Dissipation
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Additional Infomation About Product

The SSM6N35FE,LM(T is a Dual N-channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET), manufactured by Toshiba. It is a unipolar transistor that operates on a maximum voltage of 20 volts and a maximum source drain current of 180 mA. It has a maximum output power of 150 mW. It comes in a Small Outline Transistor package, measuring just 3.0 mm x 2.6 mm x 1.2 mm. It is a high-speed, low-power MOSFET that combines low on-resistance with low gate-charge, making it the ideal choice for applications requiring a low power switch or amplifier.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Toshiba may also be referenced as

Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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